UJT (UniJunction Transistor): It is a transistor with only one junction and three terminals: an emitter (E) and two bases (B1 and B2). BJT (Bipolar Junction Transistor): This type of transistor consists of two junctions and three terminals, namely Emitter "E", Base "B" and Collector"C". There are two types of BJT, i) PNP and ii) NPN.
Bipolar junction transistor(BJT)
generally bjt is faster than fets...because of many intrinsic junction capacitances between ...source and drain and bulk and gate,,,.. but now a days due to advancement in scaling fet is reduced in size sooo much that it became faster than bjt... mosfet is faster because of scaling. small channel length. even though it is slower but distance to be travelled is less
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For a BJT transistor the three basic elements are collector, base and emitter. For a FET transistor are drain, gate and source which are analogous for the BJT parts mentioned before.
UJT (UniJunction Transistor): It is a transistor with only one junction and three terminals: an emitter (E) and two bases (B1 and B2). BJT (Bipolar Junction Transistor): This type of transistor consists of two junctions and three terminals, namely Emitter "E", Base "B" and Collector"C". There are two types of BJT, i) PNP and ii) NPN.
See for example http://www.datasheets360.com/pdf/7308997814572458562 In general, terminals are identified by number and name, with reference to the physical appearance of the transistor package.
tO BEGIN WITH THE SMALL LEAD IS THE GATE, THEB LOOK AT THE DIODE SEE IF THERE IS A SYMBOL
Bjt is bipolar because in bjt the conduction of current is due to the electrons as well as holes
Disadvantage:Easy to damage when compared to BJT
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
Bipolar junction transistor(BJT)
Heathrow has two terminals
Mainly there are two types of transistors. They are BJT (Bipolar Junction Transistors) and FET(Field Effect Transisters). In BJT, there are two types called PNP and NPN. Actually NPN means a BJT transister.
Only 2 terminals
The AMHS has 32 terminals.
generally bjt is faster than fets...because of many intrinsic junction capacitances between ...source and drain and bulk and gate,,,.. but now a days due to advancement in scaling fet is reduced in size sooo much that it became faster than bjt... mosfet is faster because of scaling. small channel length. even though it is slower but distance to be travelled is less