it means the entrance point of a diode
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.
The incremental resistance of a diode is the inverse of the slope of the V-I curve at the operating point.
IN IN = 1N: Refers to the number of junctions (1N= 1 junction). O= Germanium, A= rectifier diode, so OA = germanium rectifier diode.
In a Silcon diode no current flows in the forward direction (anode to positive voltage) until approximately 0.6 - 0.7Volts is reached. Above this voltage the current rises in line with Ohms Law. In the reverse direction only micro Amps flow (leakage current) In a Germanium diode the threshold is about 0.2 volts and reverse leakage is higher.
Threshold
Threshold is the entrance or beginning point of something.
Type your answer here... It is nothing but surpassing the renal threshold of an individual above the threshold which was normal to that person in certain period.
The 1 stands for number of semiconductor junctions The N means it's a semiconductor diode
lips.... has highest threshold for 2 point discrimination
Anaerobic Threshold is the point at which aerobic oxygen demands exceed capability
Anaerobic Threshold is the point at which aerobic oxygen demands exceed capability
Threshold
the two point threshold will decrease
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
Action potential is nerve impulse triggered when a neuron reaches its threshold, or trigger point for firing. Threshold trigger point for a neuron's firing about negative 50 millivolts.
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.