Secondary breakdown is a drawback of bipolar junction transistors (BJT's), particularly in power transistors. Simply put, when high current flow causes a build up of electric fields inside of the semiconductor crystal creating "hot spots" which cause the transistor to fail.
At the large collector current, the collector to emitter drops. due to drop in voltage,collector current increases in power dessipation. this power dessipation is liocalized in highly concentrated region. In this region temperature increases rapidly.
Semiconductor material, regardless if it is P-type or N-type has a negative temperature coefficient meaning that when temperature increases its resistance decreases. Ohm's Law states that Voltage equals Current times Resistance which shows that as resistance decreases current increases. Since Power equals Current times Voltage, if current increases then power increases. A bi-product of power is heat. So, in these hot spots increased current creates heat in a small area which causes resistance to decrease in that area causing higher current flow in that area causing a further increase of heat. The domino effect eventually causes the transistor to fail.
The breakdown region of a transistor is the region where the supply voltage, Vcc, becomes so large that the collector-emitter junction of the transistor breaks down and conducts, even though there is no base current.
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
Power transistor can conduct large amount of currents through it, more than small signal transistor. power transistor has a vertical structure and small signal transistor has horizontal structure.In power transistor quasi saturation region is present which is absent in the small signal transistor. In power transistor there is a inculsion of drift layer which is not there in the small signal transistor. Power dissipation is less in power transistor and it is more in small signal transistor. b.v.polytechnic,vasai pushkar vaity.
what is the equivalent transistor for c1027
2SC5148 C5148 TRANSISTOR Ebay
The breakdown region of a transistor is the region where the supply voltage, Vcc, becomes so large that the collector-emitter junction of the transistor breaks down and conducts, even though there is no base current.
high voltage can be induced in the ct secondary which may sufficient to cause breakdown of insulation.
A diode is not an amplifier. It is a rectifier with asymmetrical voltage breakdown voltages. Usually the forward voltage is around 0.6V to 0.7V (silicon), and the reverse voltage is smaller than breakdown voltage, which is much higher. A transistor can be used as an amplifier, by taking into account the fact that the voltage breakdown curves vary, usually collector-emitter, as a function of some other current, usually base-emitter, but this depends on the class of the amplifier and whether or not the transistor is driven into saturation.
No, the doping profile is entirely wrong. Also some transistors have very low reverse breakdown voltage on the BE junction and will burn out!
A silicon transistor is a transistor made of silicon.
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
A Unijunction Transistor is a transistor that acts solely as a switch.
Similar to a 2N3906 PNP transistor
how does a transistor behaviour
i dont know exactly but i like to share what i know.... transistors are named as BC,BD,AF,SL,AC,BL..etc they are different from each other based on the amplification factor,maximum voltage can be applied,breakdown voltages,gain.......... i would make this answer better with reference......
Power transistor can conduct large amount of currents through it, more than small signal transistor. power transistor has a vertical structure and small signal transistor has horizontal structure.In power transistor quasi saturation region is present which is absent in the small signal transistor. In power transistor there is a inculsion of drift layer which is not there in the small signal transistor. Power dissipation is less in power transistor and it is more in small signal transistor. b.v.polytechnic,vasai pushkar vaity.
I believe that is resistor transistor technology TTL transistor transistor logic