basically a .6v to .7v is required to saturate the transistor
The collector to emitter region will begin to become conductive once the base emitter junction is forward biased enough. Depending on the current through the base-emitter junction, the forward voltage drop could be anywhere from around .55 to .8 volts. .6 to .7 volts minimum is a good approximation not taking into account the device characteristics. Bipolar transistors (npn pnp) are current to current devices not voltage to current. This is for silicon transistors, germanium devices are lower forward voltage devices. Around .3 volts.
If it's a germanium transistor, 0.3 volts. If it's the more common silicon transistor, slightly more than 0.6 volts.
The transistor allows you to turn it off when you want, while the thyristor, or SCR, will not turn off until the anode-cathode voltage drops below the cutoff voltage.
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
A: They both have redeemable quality. Germanium has lower turn on voltage as compared to silicon however their current capability is not too great and also have a problem leaking with temperature. SO THE USE IS DEPENDENT ON APPLICATIONS
a FET, or Feild Effect Transistor. In a FET, the value of the current depends upon the value of the voltage applied at the gate and drain so it is known as a voltage controlled device. For example: In a MOSFET the current from drain to source depends upon the width of the depletion layer which in turn depends upon the voltage applied on the gate.
If it's a germanium transistor, 0.3 volts. If it's the more common silicon transistor, slightly more than 0.6 volts.
An NPN transistor must be biased with a positive voltage in order to "turn on". A silicon transistor must have at least .07 volts on its base to start current flow from the collector to the emitter of the transistor. Some transistors have different biasing voltages. Like a germanium transistor will "turn on" at .02 volts.
The base of a transistor is basically a diode wich follows an exponential curve at very low level it display an almost infinite inpedance but at hi lelvel any additional diode current will not increase its voltage drop therefore a nominal value is assigned of .6v to .7v
Emitter biasing is when you add a resistor between the emitter of a transistor and the 0v rail so that any voltage developed across the emitter will subtract from the voltage on the base and effectively turn the transistor OFF. We are talking about an NPN transistor and the transistor is an "ordinary transistor" or BJT (bi-polar Junction Transistor). For more information on transistor biasing see: Talking Electronics website.
The transistor allows you to turn it off when you want, while the thyristor, or SCR, will not turn off until the anode-cathode voltage drops below the cutoff voltage.
For proper working of a transistor,the voltage at the base region must be more positive than that of the emitter region.The voltage at the collector region, in turn, must be more positive than that of the base region.when voltage is applied to transistor, the emitter supplies electron,which is pulled by the base from the emitter as it is more positive than the emitter.This movement of electrons from emitter to collector creates as flow of electricity through the transistor.The current passes from the emitter to the collector through the base.Thus, adjustment of voltage in the base region modifies the flow of the current in the transistor by changing the number of electron in the base region. In this way, small changes in the base voltage can cause large changes in the current flowing out of the collector. We have three transistor element, a.)Emitter b.)Base c.)Collector
12 volts.
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
A: They both have redeemable quality. Germanium has lower turn on voltage as compared to silicon however their current capability is not too great and also have a problem leaking with temperature. SO THE USE IS DEPENDENT ON APPLICATIONS
A; There is just no thyristor that can be turn off with the gate. Once on it will stay on until the holding current is reduced and or the voltage is reversed in polarity. The gate is only used to turn it ON never off.
a FET, or Feild Effect Transistor. In a FET, the value of the current depends upon the value of the voltage applied at the gate and drain so it is known as a voltage controlled device. For example: In a MOSFET the current from drain to source depends upon the width of the depletion layer which in turn depends upon the voltage applied on the gate.
we know that in a transistor we have three types of regions: EMITTER, COLLECTOR, BASE, and we know that emitter is highly doped, so charge carriers are very high, so resistance is very less, and on the other side collector is moderately doped so charge carriers are less, so resistance is very high. So from the above concept we conclude that in a transistor current is flowing from low resistance to high resistance. for example the 100 electrons are moving from emitter to base, in base only some (4 electrons) of the electrons are neutralized, and remaining 96 electrons are moved to collector terminal through high resistance path. so now same current flowing through high resistance so voltage amplified.