basically a .6v to .7v is required to saturate the transistor
The collector to emitter region will begin to become conductive once the base emitter junction is forward biased enough. Depending on the current through the base-emitter junction, the forward voltage drop could be anywhere from around .55 to .8 volts. .6 to .7 volts minimum is a good approximation not taking into account the device characteristics. Bipolar transistors (npn pnp) are current to current devices not voltage to current. This is for silicon transistors, germanium devices are lower forward voltage devices. Around .3 volts.
If it's a germanium transistor, 0.3 volts. If it's the more common silicon transistor, slightly more than 0.6 volts.
The transistor allows you to turn it off when you want, while the thyristor, or SCR, will not turn off until the anode-cathode voltage drops below the cutoff voltage.
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
A: They both have redeemable quality. Germanium has lower turn on voltage as compared to silicon however their current capability is not too great and also have a problem leaking with temperature. SO THE USE IS DEPENDENT ON APPLICATIONS
Transistor switching times: The turn-on time of switching transistor sum of delay time (td) and rise time (tr). ton = td + tr. Delay time (td): It is defined as the time during which the collector current rises from zero to 0.1ICS.
If it's a germanium transistor, 0.3 volts. If it's the more common silicon transistor, slightly more than 0.6 volts.
An NPN transistor must be biased with a positive voltage in order to "turn on". A silicon transistor must have at least .07 volts on its base to start current flow from the collector to the emitter of the transistor. Some transistors have different biasing voltages. Like a germanium transistor will "turn on" at .02 volts.
The base of a transistor is basically a diode wich follows an exponential curve at very low level it display an almost infinite inpedance but at hi lelvel any additional diode current will not increase its voltage drop therefore a nominal value is assigned of .6v to .7v
The energy gap, or bandgap, of silicon refers to the energy difference between the valence band and the conduction band, which is approximately 1.1 eV at room temperature. In contrast, the turn-on voltage is the minimum voltage required to forward-bias a silicon diode, allowing significant current to flow; this typically ranges from 0.6 to 0.7 volts. While the energy gap is a fundamental property of the material related to its electronic structure, the turn-on voltage is influenced by factors such as temperature and doping levels.
Emitter biasing is when you add a resistor between the emitter of a transistor and the 0v rail so that any voltage developed across the emitter will subtract from the voltage on the base and effectively turn the transistor OFF. We are talking about an NPN transistor and the transistor is an "ordinary transistor" or BJT (bi-polar Junction Transistor). For more information on transistor biasing see: Talking Electronics website.
The transistor allows you to turn it off when you want, while the thyristor, or SCR, will not turn off until the anode-cathode voltage drops below the cutoff voltage.
The turn-on time in a bipolar junction transistor (BJT) refers to the duration it takes for the transistor to switch from the cutoff region (off state) to the saturation region (on state) after a forward bias is applied. Conversely, the turn-off time is the time required for the BJT to switch from saturation back to cutoff after the bias is removed. These times are influenced by factors such as the transistor's internal capacitances, the base drive current, and the collector-emitter voltage. Minimizing these times is crucial for improving the switching speed in high-frequency applications.
In a PMOS transistor, the source is connected to the positive supply voltage (VDD) because it allows the transistor to turn on when the gate voltage is pulled low (below the source voltage). This configuration enables the PMOS to conduct current when the gate is at a lower potential, effectively allowing it to act as a switch in digital circuits. By connecting the source to VDD, the PMOS transistor can efficiently control the flow of current to the load connected to the drain.
For proper working of a transistor,the voltage at the base region must be more positive than that of the emitter region.The voltage at the collector region, in turn, must be more positive than that of the base region.when voltage is applied to transistor, the emitter supplies electron,which is pulled by the base from the emitter as it is more positive than the emitter.This movement of electrons from emitter to collector creates as flow of electricity through the transistor.The current passes from the emitter to the collector through the base.Thus, adjustment of voltage in the base region modifies the flow of the current in the transistor by changing the number of electron in the base region. In this way, small changes in the base voltage can cause large changes in the current flowing out of the collector. We have three transistor element, a.)Emitter b.)Base c.)Collector
12 volts.
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
To turn a diode on, you need to apply a forward voltage across it, ensuring that the positive terminal of the voltage source is connected to the anode and the negative terminal to the cathode. This forward voltage must exceed the diode's threshold, known as the forward voltage drop (typically around 0.7V for silicon diodes and 0.3V for germanium diodes). Once this voltage is applied, the diode allows current to flow through it, effectively turning it on.