see wavelength=1.24/Band gap energy this wavelength is in micrometer.so accordingly ans will be=1.24/1.42=0.873micrometer I think u had appeared in BSNL JTO. How many u attempted?? Vijay
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
1.7 volts
A Tunneldiode, usually made of GaAS. In a part of its curve it has a negative resistance. This means that when you increase the voltage in that region, the current will drop.
In the fall of 1961, while working at Texas Instruments Inc., James R. Biard and Gary E. Pittman found that gallium arsenide (GaAs) emitted infrared light when electric current was applied. On Aug. 8th, 1962, Biard and Pittman filed a patent based on their findings titled "Semiconductor Radiant Diode" (U.S. Patent US3293513). After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Labs at MIT, the U.S. patent office issued the two inventors the first patent for the infrared (IR) light-emitting diode, the first modern LED. After filing the patent, Texas Instruments immediately began a project to manufacture infrared diodes. They announced the first commercial LED product (the SNX-100) in October of 1962.
Gaas's population is 450.
The area of Gaas is 9,130,000.0 square meters.
No GaAs is a semiconductor- and as such is essentially a covalent compound.
Gallium Arsenide (GaAs) has a 2.5eV band gap (@ 295 K)
Kerosene in Tagalog is "petrolyo" or "kerosina."
GaAs has high mobility compare to Si
Gallium Arsenic
ionic
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
1.7 volts
Gallium Arsenic
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