see wavelength=1.24/Band gap energy this wavelength is in micrometer.so accordingly ans will be=1.24/1.42=0.873micrometer I think u had appeared in BSNL JTO. How many u attempted?? Vijay
1.7 volts
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
A Tunneldiode, usually made of GaAS. In a part of its curve it has a negative resistance. This means that when you increase the voltage in that region, the current will drop.
In the fall of 1961, while working at Texas Instruments Inc., James R. Biard and Gary E. Pittman found that gallium arsenide (GaAs) emitted infrared light when electric current was applied. On Aug. 8th, 1962, Biard and Pittman filed a patent based on their findings titled "Semiconductor Radiant Diode" (U.S. Patent US3293513). After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Labs at MIT, the U.S. patent office issued the two inventors the first patent for the infrared (IR) light-emitting diode, the first modern LED. After filing the patent, Texas Instruments immediately began a project to manufacture infrared diodes. They announced the first commercial LED product (the SNX-100) in October of 1962.
Silicon (Si) and Germanium (Ge) do not emit light because they are indirect bandgap materials. This means that when they are excited, most of the electrons and holes recombine through phonon-mediated transitions, resulting in the release of heat instead of light. In contrast, direct bandgap materials, such as gallium arsenide (GaAs), release light when electrons and holes recombine.
Gaas's population is 450.
Gallium Arsenic
No GaAs is a semiconductor- and as such is essentially a covalent compound.
The area of Gaas is 9,130,000.0 square meters.
Gallium Arsenide (GaAs) has a 2.5eV band gap (@ 295 K)
Knee voltage, also known as threshold voltage, in Gallium Arsenide (GaAs) refers to the minimum voltage required to initiate significant current flow in a GaAs device, such as a transistor or diode. This voltage is crucial for determining the operational characteristics of GaAs-based electronic components. Typically, knee voltage in GaAs devices is lower compared to silicon counterparts, making GaAs favorable for high-frequency and high-efficiency applications.
GaAs has high mobility compare to Si
ionic
1.7 volts
Gallium Arsenic
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