collector junction is reverse biased so as to remove the charge carriers away from its junction with the base.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
Because most of the heat buildup occurs in the reverse biased collector-base junction where Ic = Ie + Ib flows.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
Yes1
As the applied base-collector voltage (VBC) varies, the base-collector depletion region varies in size. This variation causes the gain of the device to change, since the gain is related to the width of the effective base region. This effect is often called the "Early Effect"An NPN bipolar transistor can be considered as two diodes connected anode to anode. In normal operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased. In an npn-type transistor for example, electrons from the emitter wander (or "diffuse") into the base
Most transistors and diodes exhibit reverse bias leakage.
Icbo (collector to base current when emitter is open) also called reverse saturation current as Is in reverse bias p-n junction diode.Regards
Assuming you mean a bipolar junction transistor (BJT): 1. Reverse bias on the collector-base junction. 2. Forward bias on the base-emitter junction, that is 3. Sufficient to give the correct operating point of collector voltage/collector current.
Bipolar junction transistors has two junctions base emitter junction, base collector junction. Accordingly there are four different regions of operation in which either of the two junctions are forward biased reverse biased or both. But the BJT can be effectively operated in there different modes according to the external bias voltage applied at each junction. i.e. Transistor in active region, saturation and cutoff. The other region of operation of BJT is called as inverse active region.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
No, the doping profile is entirely wrong. Also some transistors have very low reverse breakdown voltage on the BE junction and will burn out!
No, the doping profile is entirely wrong. Also some transistors have very low reverse breakdown voltage on the BE junction and will burn out!
Reverse-biased ---from the book of Malvino
actually in the case of transistors there are two concepts that are often misleaded those are 1. order of doping 2. order of the size of various regions order of doping emitter>collector>base order of size of various regions collector>emitter>base now the reason for this as CB junction is reverse biased more heat is dissipated at this junction so if the collector junction has large area the heat can be dissipated easily there by the transistor is saved from the burning of CB junction
Because most of the heat buildup occurs in the reverse biased collector-base junction where Ic = Ie + Ib flows.
No freaking way but it would make an excellent low level switch if forced at beta of 10
A: Actually it is only one transistor required for amplification the other junction can be a diode. As current Begin to flow it causes a bias across one junction which is opposite biasing for the other, A good differential amplifier will have those junction virtually at the same point with a very good current source because any mismatched will cause and output without any input. It is called voltage offset on the other end if the feedback current is very small it will also produce an output voltage offset known as current offset or basically errors