collector junction is reverse biased so as to remove the charge carriers away from its junction with the base.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
Because most of the heat buildup occurs in the reverse biased collector-base junction where Ic = Ie + Ib flows.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
Yes1
As the applied base-collector voltage (VBC) varies, the base-collector depletion region varies in size. This variation causes the gain of the device to change, since the gain is related to the width of the effective base region. This effect is often called the "Early Effect"An NPN bipolar transistor can be considered as two diodes connected anode to anode. In normal operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased. In an npn-type transistor for example, electrons from the emitter wander (or "diffuse") into the base
Icbo (collector to base current when emitter is open) also called reverse saturation current as Is in reverse bias p-n junction diode.Regards
Most transistors and diodes exhibit reverse bias leakage.
To reverse bias a base-collector junction in a bipolar junction transistor (BJT), you need to apply a positive voltage to the collector relative to the base for an NPN transistor (or a negative voltage for a PNP transistor). This involves connecting the collector terminal to a higher potential and ensuring the base terminal is at a lower potential. As a result, the depletion region at the base-collector junction widens, preventing current flow between the collector and base. This condition is essential for transistor operation in certain configurations, such as in cutoff mode.
Assuming you mean a bipolar junction transistor (BJT): 1. Reverse bias on the collector-base junction. 2. Forward bias on the base-emitter junction, that is 3. Sufficient to give the correct operating point of collector voltage/collector current.
Bipolar junction transistors has two junctions base emitter junction, base collector junction. Accordingly there are four different regions of operation in which either of the two junctions are forward biased reverse biased or both. But the BJT can be effectively operated in there different modes according to the external bias voltage applied at each junction. i.e. Transistor in active region, saturation and cutoff. The other region of operation of BJT is called as inverse active region.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
No, the doping profile is entirely wrong. Also some transistors have very low reverse breakdown voltage on the BE junction and will burn out!
No, the doping profile is entirely wrong. Also some transistors have very low reverse breakdown voltage on the BE junction and will burn out!
When the emitter of a bipolar junction transistor (BJT) is off, the collector-base junction is typically reverse-biased, meaning that the collector current is minimal or negligible. In this state, the collector-base junction does not conduct significant current because the emitter does not provide carriers to the base. As a result, the collector current is effectively zero, and the transistor is in its cutoff region.
actually in the case of transistors there are two concepts that are often misleaded those are 1. order of doping 2. order of the size of various regions order of doping emitter>collector>base order of size of various regions collector>emitter>base now the reason for this as CB junction is reverse biased more heat is dissipated at this junction so if the collector junction has large area the heat can be dissipated easily there by the transistor is saved from the burning of CB junction
Reverse-biased ---from the book of Malvino
The normal operating conditions of a transistor typically involve it being in one of its active regions, such as the active region for bipolar junction transistors (BJTs) or the saturation region for field-effect transistors (FETs). For BJTs, this means the base-emitter junction is forward-biased while the collector-base junction is reverse-biased. For FETs, it involves applying a sufficient gate-source voltage to allow current to flow between the drain and source. Under these conditions, the transistor can amplify signals or switch them effectively.