h-parameter used to find the input and output impedence of the two port network. suppose if u connect a high load at the output port then u should take care that no current from the device will attack the network, to determine that we should know what is the impedance of the circuit.
The modern CPU (typically inside a microprocessor IC) is built of billions of transistors (typically complementary MOSFETs). The CPUs of the late 1960s were built of tens of thousands to hundreds of thousands of transistors inside several hundred MSI ICs (typical silicon NPN BJTs). The CPUs of the late 1950s to early 1960s were built of thousands to tens of thousands of discrete transistors (typically germanium BJTs, gradually transitioning silicon BJTs). The CPUs of the early 1950s did not use transistors, they were built of hundreds to tens of thousands of vacuum tubes.
The PIV (Peak Inverse Voltage) rating of a transistor, particularly in the context of bipolar junction transistors (BJTs) and diodes, refers to the maximum reverse voltage that the device can withstand without breaking down. For BJTs, the PIV is typically related to the collector-emitter voltage (V_CE) in reverse bias conditions. Exceeding the PIV rating can lead to failure or damage of the transistor, so it is crucial to operate within specified limits to ensure reliability and longevity.
JFETs (Junction Field-Effect Transistors) offer advantages over BJTs (Bipolar Junction Transistors) such as higher input impedance, which leads to lower power consumption and reduced loading on preceding stages. They also have faster switching speeds and are less susceptible to thermal runaway. However, BJTs generally provide better linearity and gain, making them preferable for certain analog applications. Additionally, JFETs are more sensitive to static electricity and can be more challenging to fabricate in integrated circuits.
The bandwidth of a Field-Effect Transistor (FET) is generally larger than that of a Bipolar Junction Transistor (BJT) due to the differences in their operating principles. FETs operate using electric fields to control current, leading to lower capacitance and faster switching speeds. In contrast, BJTs rely on charge carrier injection and recombination, which introduces delays that limit their frequency response. As a result, FETs can achieve higher frequency operation and greater bandwidth compared to BJTs.
The normal operating conditions of a transistor typically involve it being in one of its active regions, such as the active region for bipolar junction transistors (BJTs) or the saturation region for field-effect transistors (FETs). For BJTs, this means the base-emitter junction is forward-biased while the collector-base junction is reverse-biased. For FETs, it involves applying a sufficient gate-source voltage to allow current to flow between the drain and source. Under these conditions, the transistor can amplify signals or switch them effectively.
The two main types of transistors are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs operate by controlling the flow of current via two types - NPN and PNP. FETs control current flow using an electrical field, with types including MOSFETs and JFETs.
The modern CPU (typically inside a microprocessor IC) is built of billions of transistors (typically complementary MOSFETs). The CPUs of the late 1960s were built of tens of thousands to hundreds of thousands of transistors inside several hundred MSI ICs (typical silicon NPN BJTs). The CPUs of the late 1950s to early 1960s were built of thousands to tens of thousands of discrete transistors (typically germanium BJTs, gradually transitioning silicon BJTs). The CPUs of the early 1950s did not use transistors, they were built of hundreds to tens of thousands of vacuum tubes.
FET has very high input impedanceBJT has very low input impedance
No. For BJTs, they have a natural amplification, B, of current between the base current to collector current. In rough calculations, I've often used 50. So applying 20uA of current to the base of a BJT should cause 1mA of current to flow through the collector (assuming base, collector, and emitter resistors are sized appropriately so this is not limitted). The emitter will see the base current + the collector current.
The PIV (Peak Inverse Voltage) rating of a transistor, particularly in the context of bipolar junction transistors (BJTs) and diodes, refers to the maximum reverse voltage that the device can withstand without breaking down. For BJTs, the PIV is typically related to the collector-emitter voltage (V_CE) in reverse bias conditions. Exceeding the PIV rating can lead to failure or damage of the transistor, so it is crucial to operate within specified limits to ensure reliability and longevity.
JFETs (Junction Field-Effect Transistors) offer advantages over BJTs (Bipolar Junction Transistors) such as higher input impedance, which leads to lower power consumption and reduced loading on preceding stages. They also have faster switching speeds and are less susceptible to thermal runaway. However, BJTs generally provide better linearity and gain, making them preferable for certain analog applications. Additionally, JFETs are more sensitive to static electricity and can be more challenging to fabricate in integrated circuits.
The bandwidth of a Field-Effect Transistor (FET) is generally larger than that of a Bipolar Junction Transistor (BJT) due to the differences in their operating principles. FETs operate using electric fields to control current, leading to lower capacitance and faster switching speeds. In contrast, BJTs rely on charge carrier injection and recombination, which introduces delays that limit their frequency response. As a result, FETs can achieve higher frequency operation and greater bandwidth compared to BJTs.
The normal operating conditions of a transistor typically involve it being in one of its active regions, such as the active region for bipolar junction transistors (BJTs) or the saturation region for field-effect transistors (FETs). For BJTs, this means the base-emitter junction is forward-biased while the collector-base junction is reverse-biased. For FETs, it involves applying a sufficient gate-source voltage to allow current to flow between the drain and source. Under these conditions, the transistor can amplify signals or switch them effectively.
Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.
FETs (Field-Effect Transistors) are generally less noisy than BJTs (Bipolar Junction Transistors) because they operate using an electric field to control current flow, which results in lower thermal noise and reduced flicker noise. FETs have higher input impedance, leading to lower current draw and consequently less thermal agitation of charge carriers. Additionally, the absence of minority carrier injection in FETs minimizes noise generation compared to BJTs, which rely on charge carriers that can introduce more noise.
The field-effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are sometimes called unipolar transistors to contrast their single-carrier-type operation with the dual-carrier-type operation of bipolar (junction) transistors (BJT). The concept of the FET predates the BJT, though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.
Yes, of course but you must first expand the devices to equivalent circuit models of the appropriate approximation level to get reasonable answers. Such equivalent circuit models will have anywhere from 3 or 4 components to dozens depending on approximation level.