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no,drift current depends upon electric field where as carrier concentration lead to diffusion current
I am assuming the charge carries are electron and hole in an semiconductor. the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor. the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen. in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
Yes, voltage can change with temperature due to the effects of temperature on the electrical properties of materials. In conductors, increased temperature typically leads to higher resistance, which can affect the voltage drop across the material. In semiconductors, voltage can change significantly with temperature due to changes in carrier concentration and mobility. Overall, the relationship between voltage and temperature depends on the specific material and its characteristics.
When light decreases, the generation of electron-hole pairs in a photodiode diminishes, leading to a reduction in the minority-carrier concentration. This results in a decrease in the reverse minority-carrier current, as there are fewer charge carriers available to contribute to the current flow. Consequently, the photodiode's response weakens, indicating less sensitivity to light. In essence, decreased light leads to lower photocurrent due to reduced carrier generation.
Three conditions that can determine a semimetal's conductivity are band overlap, charge carrier concentration, and mobility of charge carriers. Band overlap refers to the overlapping of the valence and conduction bands, charge carrier concentration relates to the number of available carriers, and mobility of charge carriers refers to how freely the carriers can move through the material.
help plzz
The carrier mobility of p-type germanium typically ranges from around 200-500 cm^2/Vs.
The concentration of the compound is measured in nanomolar units.
The concentration of the solution is measured in millimolar units.
The concentration of the solution is expressed in micromolar units.
no,drift current depends upon electric field where as carrier concentration lead to diffusion current
The concentration of the solution is measured in nanomolar units.
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
There are no units of concentration. Concentration is written as density, which requires a mass measurement, and a volume measurement. The standard units for this is grams per liter.
The concentration of the compound in the solution is measured in nanomolar units.
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