A diode is a semiconductor electrical component that allows an electric current in only one direction.
A tunnel diode, or Esaki diode, is a special type of diode that can operate very quickly using quantum tunneling, allowing it to work even with microwave frequencies (current switching direction billions of times per second).
A negative resistance region is where the current goes up while the voltage goes down, or vice versa. This is a characteristic of the esaki or tunnel diode, when it is in its tunnel region.
Tunnel diodes are used on very High frequency and fabricated using degenerated semiconductor GaAs.When it got positive potential to anode and negative to cathode the current passing through it increases up to Ip peak value after that the majority carriers on n side does not come to p side because the valance level of n side rise up . after that current reduces up to valley value and after that if you further increase forward voltage it behave like ordinary p-n diode and current will increase according to voltage(Non- linearly) . It is invented by L. Esaki and sometime called esaki diode and they were get Nobel Prize for this tremendous invention.
gunn diode is transfered electron device & PIN diode is semiconductor device
whether we know that p-n diode is real diode. But still in case of semeconductor we see then silics is real diode.
Bulk resistance of diode depends on how it is biased. The bulk resistance of a diode is the approximate resistance of the diode when it is forward biased.
The symbol for the esaki diode, also known as the tunnel diode, is similar to the zener diode, except that the two stems on the end of the cathode both point back towards the anode, and they are at 90 degrees instead of 45 degrees. For more information, and a picture, please see the related link below.
Esaki Lighthouse was created in 1871.
Esaki Reiji was born in 1845.
Esaki Reiji died in 1910.
Tetsuma Esaki was born in 1943.
Masanori Esaki has written: 'Go Seigen'
Leo Esaki was born on March 12, 1925.
Leo Esaki was born on March 12, 1925.
Kazuhito Esaki was born on 1986-10-31.
A negative resistance region is where the current goes up while the voltage goes down, or vice versa. This is a characteristic of the esaki or tunnel diode, when it is in its tunnel region.
Leo Esaki is 86 years old (birthdate: March 12, 1925).
Leo Esaki won The Nobel Prize in Physics in 1974.