What is breakdown mechanism in the semiconductor diode?

Answer 1

a conductor which doped interncily i.e doped externaly is semiconductor

m=1/1-(v/vbd)n

m=multipulfactors

v=applied revese voltage

vbd=break down reverse voltage

n= emperical constant

n=4 for n-type si

n=2 forp-type si

Answer 2

Gate oxide breakdown, a failure of the oxide between the gate and source or drain, is the most common cause of MOSFET failure.

Drain to source breakdown, caused by excessive operating voltage, is a junction breakdown that can cause damage due to high power dissipation.