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The full form of igbt is insulated gate bipolar transistor.

it is constructed from the combining of both BJT and PMOSFET.

it has high input impedance and low on - state power loss .

it is free from second break down problem present in bjt...

it is also known as (MOSIGT), (COMFET)...

it is constructed virtualy in the same manner as a power

MOSFET.an IGBT has also thousand of basic structure cells

connected appropritely on a single chip of silicon.

it has a four substrate p,p+,n+,n-. respectively...

p+ substrate is called injection layer because it injects

holes into n- layer .n- layer is called drift region .

thickness of the n- layer determines the voltage blocking

capability of IGBT.

the p layer is called body of the IGBT.

WHERE IT IS USED : it is widely used in medium power

application such as DC and AC motors drives.

UPS SYSTEMS , RELAYS AND CONTACTORS.

In thyristor the gate is triggered the gate is losses its

control. ie if we remove the gate pulse after the thyristor

starts conducting it will not stop.

but in IGBT we can control the Gate. by applying reverse

voltage applied across it .

The Thyristors can not be switched beyond 1kHz where as

IGBTs can be switched upto 25kHz and even to 100KHz with

few soft switching techniques.

The thyristor can carry very high currents order of 3000A

but IGBT carries less current max of 1000A.

Thyristor commutation ,that is switching off is very

difficult. But there are applications of Thyristor with

natural commutation.

The IGBT can be switched on and off like a MOSFET. ie it is

voltage controlled device.

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16y ago

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