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What are the three basic transistor connection configuration modes?

The three basic transistor connection configuration modes are common emitter, common base, and common collector. In the common emitter configuration, the emitter terminal is common to both the input and output circuits, providing high voltage gain. The common base configuration has the base terminal common to both circuits, offering high frequency response but low voltage gain. Finally, the common collector configuration, also known as an emitter follower, provides current gain and high input impedance while maintaining unity voltage gain.


Which configuration of bipolar junction transistor which will give both current gain and voltage gain?

high voltage gain :- common base since the ratio of output impedance to the input impermanence is very high in common base mode high current gain :-common collector since it is the ratio of Ie/Ib


Why does ce configuration provide large current amplification while the cb configuration does not?

The common emitter (CE) configuration provides large current amplification because it utilizes a small base current to control a much larger collector current, resulting in a significant current gain (β). In contrast, the common base (CB) configuration does not offer the same level of amplification since it is designed for high-frequency applications and has a lower input impedance, which leads to a smaller output current relative to the input. Additionally, the CB configuration does not allow for the same degree of control over the collector current by the base current as the CE configuration does.


Common collector amplifier does not have voltage gain but still provide power gain?

It still has a current gain significantly high though the voltage gain is close to unity.


Why more current amplification in common emitter?

A bipolar transistor can be used in different configurations in linear electronic design. Most well known is the common emitter CE configuration with a base current as input signal resulting in a collector signal multiplied by the current gain factor. The second configuration is known as the emitter follower or common collector configuration. Here the input signal is in the form of a voltage between the base and the common connection. The output signal is found in the form of a voltage at the emitter with a relative low output impedance. The voltage swing at the input is almost as large at the output where the input impedance equals the product of the current gain factor and the emitter resistance. The third configuration is known as common base CB. Here the input current at the emitter almost equals the output current at the collector. The current gain is nearly equal to 1.

Related Questions

What are the three basic transistor connection configuration modes?

The three basic transistor connection configuration modes are common emitter, common base, and common collector. In the common emitter configuration, the emitter terminal is common to both the input and output circuits, providing high voltage gain. The common base configuration has the base terminal common to both circuits, offering high frequency response but low voltage gain. Finally, the common collector configuration, also known as an emitter follower, provides current gain and high input impedance while maintaining unity voltage gain.


Which configuration of bipolar junction transistor which will give both current gain and voltage gain?

high voltage gain :- common base since the ratio of output impedance to the input impermanence is very high in common base mode high current gain :-common collector since it is the ratio of Ie/Ib


Why does ce configuration provide large current amplification while the cb configuration does not?

The common emitter (CE) configuration provides large current amplification because it utilizes a small base current to control a much larger collector current, resulting in a significant current gain (β). In contrast, the common base (CB) configuration does not offer the same level of amplification since it is designed for high-frequency applications and has a lower input impedance, which leads to a smaller output current relative to the input. Additionally, the CB configuration does not allow for the same degree of control over the collector current by the base current as the CE configuration does.


Which transistor configuration has the highest voltage gain?

Common Emitter(CE) Configuration possess largest voltage gain among the three(CE CB CC).


Can you use CC configuration as an amplifier?

The Common Collector configuration amplifies current, by having the emitter voltage follow the base voltage, with an offset of the forward conduction voltage of about 0.7 volts, with a current gain of beta. (hFe)


Common collector amplifier does not have voltage gain but still provide power gain?

It still has a current gain significantly high though the voltage gain is close to unity.


Why more current amplification in common emitter?

A bipolar transistor can be used in different configurations in linear electronic design. Most well known is the common emitter CE configuration with a base current as input signal resulting in a collector signal multiplied by the current gain factor. The second configuration is known as the emitter follower or common collector configuration. Here the input signal is in the form of a voltage between the base and the common connection. The output signal is found in the form of a voltage at the emitter with a relative low output impedance. The voltage swing at the input is almost as large at the output where the input impedance equals the product of the current gain factor and the emitter resistance. The third configuration is known as common base CB. Here the input current at the emitter almost equals the output current at the collector. The current gain is nearly equal to 1.


What is the maxium current gain of common base amplifier?

If Beta is infinite, then the current gain will be unity.


What is the alpha beta teta of a bipolar junction transistor?

alpha is the common base current gain = Ic/Ie.beta is the common emitter current gain = Ic/Ib.


Why common emitter configuration is preferred?

Reason: The common Emitter mode has voltage and current gain better than the other two configurations(CB and CC). i.e it has a current gain greater than that of CC mode and greater voltage gain than that of CB mode.


Why Common Emitter Configuration is most commonly used in amplifier circuits?

the common emitter configuration is most widely used in amplifer circuits because of its high voltage,current & power gain.the common emitter configuration is most widely used in amplifer circuits because of its high voltage,current & power gain.


Transistor as an amplifier common emitter configuration explanation using kirchhof's law?

Kirchoff's current law states that the current in every point in a series circuit is the same. In the case of a transistor in common emitter configuration, you can take advantage of that fact and state that the collector current is equal to the emitter current. The truth is somewhat different, because the gain of the transistor is not infinity, so the base current must be added to the emitter current. With a reasonably high gain, however, you can ignore the base current. Consider that the emitter voltage is related to the base voltage by the forward drop of the base-emitter junction, about 0.7 volts, and the collector and emitter currents are the same. Now look at the collector and emitter resistors. If the currents are the same, and the voltage across the emitter resistor is known, then you know the voltage across the collector resistor as well. This is an application of both Kirchoff's and Ohm's laws. The gain, then, of this amplifer is collector resistance divided by emitter resistance. It is an inverting amplier in this configuration. In some configurations, the emitter resistor is zero ohms. This does not mean the gain is infinity - it now means that the gain is limited by the gain of the transistor, which it is anyway - the emitter resistor is used to stabilize the gain and reduce dependency on individual transistor gains, which do vary.