Transistors require semiconductor material to be able to function since a transistor must be able to change it's state of conductivity according to its working conditions. Although many elements these days are involved in manufacturing of transistors. Fundamentally two common semiconductors are described for educational purpose for BJT (bipolar junction transistors). They are Silicon (Si) and Germanium (Ge). Silicon is never intrinsic (pure) in transistors.
To form a p-n-p or n-p-n junction they are doped with pentavalent (5 valance electrons) and trivalent (3-valance electrons) impurities into their crystal lattice. Common impurities in silicon transistors may be trivalent Boron for p-type and pentavalent phosphorus for n-type. Germanium conducts better when in conductive state than silicon due to 32 electrons per atom, but due to high electron density the device can handle very little electrical current.
Germanium was used in the past for pre-amplifiers. Silicon does not have as good conductivity and also does not provide very high hfe values. The highest hfe value you will find in signal transistors would be approximately 300, whereas power transistors you would commonly have an hfe of about 25. Silicon only has 14 electrons per atom. The main advantage is with silicon is that it has a lower electron density when it is in conductive state; to allow larger currents and higher power dissipation.
In the past, difficulty was experienced with the practical use of silicon due to its lack of 'purity'. Once a purer form of silicon was produced, there was no stop to it. Silicon is more cost effective. In 1998 silicon sold for $10 p/kg compared to germanium which was almost at $1800 p/kg.
Germanium is showing some comeback again. Gallium arsenide (GaAs) in wireless communications devices are being replaced with Silicon-germanide (SiGe) and become more useful with modern high speed integrated circuits. Germanium is also commonly used in infrared night vision systems and fiber-optics.
Ultimately one cannot say that Silicon is the only element used in transistors, but what one can say is that it is probably the most commonly used and most fundamental for modern applications.
Metallization is a technique used to form metal contacts and interconnects in the fabrication of ICs.
Lithography is a technique used to make patterns on semiconductor materials.
Its the ordered growth of a material on the same material such that there vl be no any type of mismatch in their interface.
The invention of the planar process by which most IC devices are fabricated relies on the gas phase diffusion of dopants to produce N-type and P-type regions, but also on the ability of silicon dioxide to mask these diffusion processes and passivate the chip surface eliminating the need for hermetic packaging. Silicon is unique in its ability to be oxidized to produce a stable insulating coating. Germanium dioxide is crumbly and water soluble, making it impossible to use in this process. While the first IC made used germanium, it had to be handwired which would have made them prohibitively expensive to produce and much larger than even the early silicon ICs.
pure silicon is easily available cost is less efficient fabrication techniques for silicon processing better mechanical and physical properties of silicon integration with control and signal processing circuitry
Manufacturing of IC is known as Fabrication of IC.... it is fabricated from silica(sand)... Inside an IC u can see a small silicon sheet where the actual circuits are imprinted by a process... from that small sheet wires are drawn and fabricated into a IC......
Vacuum sublimation
Metallization is a technique used to form metal contacts and interconnects in the fabrication of ICs.
VLSI deals with fabrication of an IC (integrated circuit) or a chip. The design and fabrication of an IC is vital in prototyping any system. In order to implement any application, the basic requirement is an IC. Hence, VLSI which is used to fabricate bulk number of ICs is becoming popular.
Lithography is a technique used to make patterns on semiconductor materials.
Silicon dioxide is used as the insulating layer in silicon detectors to prevent electrical leakage and improve signal sensitivity by reducing noise. It also provides mechanical stability and protects the underlying silicon material from damage during fabrication processes, ensuring the detector's long-term reliability and performance.
Katrin Seeger has written: 'Fabrication of silicon nanostructures'
Its the ordered growth of a material on the same material such that there vl be no any type of mismatch in their interface.
Klaus Graff has written: 'Metal impurities in silicon device fabrication' -- subject(s): Silicon, Defects, Semiconductors, Inclusions
Silicon is preferred over carbon for semiconductor fabrication because it is abundant, easily obtained in high purity, and has well-established processing techniques. Silicon also has a higher mobility for charge carriers, making it more efficient for electronic applications compared to carbon. Additionally, silicon dioxide forms a stable insulating layer with silicon, enabling the creation of reliable semiconductor devices.
James Andrew McClean has written: 'Fabrication and d.c. properties of metal-n silicon and metal-n silicon P|p|s silicon diodes'
The invention of the planar process by which most IC devices are fabricated relies on the gas phase diffusion of dopants to produce N-type and P-type regions, but also on the ability of silicon dioxide to mask these diffusion processes and passivate the chip surface eliminating the need for hermetic packaging. Silicon is unique in its ability to be oxidized to produce a stable insulating coating. Germanium dioxide is crumbly and water soluble, making it impossible to use in this process. While the first IC made used germanium, it had to be handwired which would have made them prohibitively expensive to produce and much larger than even the early silicon ICs.