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gm = d(ID)/d(VGS), where ID = drain current, and VGS = gate bias, with all other biases fixed and all biases referenced to the source voltage. gm is the measure of how much the drain current changes with an incremental change of VGS. Practically, you measure (ID, VGS) pairs at a fixed VDS for a range of VGS. Then gm at a certain (VGS=VGS1) is simply (ID2-ID1)/(VGS2-VGS1), where 1,2 signify consecutive pairs of (ID, VGS). In other words, you can plot ID versus VGS on an x-y plot with VGS being the x-axis. Whichever way you measure the slope at a certain (VGS=VGS1) on the curve is the gm value.

Please note that gm for an MOSFET is the same in definition.

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