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A material having 4 valance electrons is called semiconductor.

On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.

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