Only if doped that way.
The carrier mobility of p-type germanium typically ranges from around 200-500 cm^2/Vs.
Yes, germanium can be doped to become an n-type semiconductor by introducing donor impurities such as phosphorus or arsenic. This process increases the number of free electrons in the material, giving it an excess of negative charge carriers.
Germanium has 32 electrons and protons; the number of neutrons is specific for each isotope. Number of neutrons in a germanium isotope = Mass number - 32
The atomic radius of germanium is approximately 122 picometers.
The energy band gap for germanium is around 0.67 electron volts (eV) at room temperature. This makes germanium a semiconductor with properties in between those of conductors and insulators.
The carrier mobility of p-type germanium typically ranges from around 200-500 cm^2/Vs.
germanium
Yes, germanium can be doped to become an n-type semiconductor by introducing donor impurities such as phosphorus or arsenic. This process increases the number of free electrons in the material, giving it an excess of negative charge carriers.
A doped germanium crystal with an excess of free holes is called a p-type semiconductor. In this type of semiconductor, the majority charge carriers are positively charged "holes" created by introducing acceptor impurities into the crystal lattice.
you can find silicon and germanium materials has 4 valence electrons. This makes them to be useful to make p type and n type materials easily.They are very cheap compare to others.
Any Pentavalent or Trivalent atom can be added to Silicon to create an "N" type or "P" type Material respectively. Which is used to create a PN Junction. Examples of Pentavalent atoms would be arsenic, antimony, and phosphorus, these Pentavalent atoms would be used to create an "N" Type material. Examples of Trivalent atoms are aluminum, boron, and gallium. Trivalent atom would be used to create "P" type material. I don't know why you would dope germanium, unless your talking about very old technology. Germanium use has slowed to a crawl since the discovery of intrinsic (pure) silicon.
Germanium oxide typically forms ionic bonds, where the germanium atom loses electrons to the oxygen atoms, creating positively charged germanium ions and negatively charged oxygen ions.
germanium or silicon crystal
Germanium
Doping silicon and germanium involves introducing impurities into the crystal lattice to alter their electrical conductivity. Adding donor impurities, such as phosphorus, increases the number of free electrons, making the material n-type. Adding acceptor impurities, such as boron, creates "holes", increasing the material's conductivity and making it p-type. Overall, doping changes the electrical properties of silicon and germanium, allowing them to be used in electronics.
Silicon is a more popular semiconductor than germanium due to factors such as its wider band gap, higher thermal stability, and better abundance in nature. Silicon also has better manufacturing processes and can operate at higher temperatures, making it more suitable for a wide range of electronic applications.
Germanium is a solid at room temperature and is a nonmetal and the call name is (Ge)