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The key differences between the nearly free electron model and the tight binding model in electronic band structure calculations are in how they treat electron interactions.

In the nearly free electron model, electrons are considered to move almost freely through the crystal lattice, with only weak interactions with the lattice. This model assumes that electrons behave like free particles in a potential well created by the lattice.

On the other hand, the tight binding model considers strong interactions between electrons and the lattice. In this model, electrons are tightly bound to specific atomic sites within the lattice, and their movement is influenced by the potential energy from neighboring atoms.

Overall, the nearly free electron model is more suitable for describing metals and simple semiconductors, while the tight binding model is better for complex materials with strong electron-lattice interactions.

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