It turns out that the bandgap of "bulk silver(I) oxide" is zero. There is no band gap. What this means is that silver(I) oxide, or Ag2O, is a conductor. The conduction band overlaps the valence band of the silver atoms, and the compound has, therefore, the ability to support the flow of current. But hold the phone. In a specially prepared (non-bulk) form, an Ag2O (with some much less stable AgO) thin film (very, very thin) is formed by deposition on a substrate. The product is then (gently) heat treated, and what emerges is a graduated matrix with more silver on the surface and a rapid transition to the silver oxide substrate. The silver layer is nanometer thick, and the resulting product has developed a band gap and exhibits some p-type semiconductive properties. And, as interesting as this is, the optical properties are even more attractive. This engineering feat has attracted attention and is being investigated because of the possibilities of application to optical memory. Activation energies are on the order of a few tens of thousandths of an eV.
In silver, there is no separation between the valence and conductance band, as they effectively "overlap". This is why silver is a good conductor.
The bulk of a hair shaft is keratin.
Divide the bulk litres by the volume of each bottle (expressed in litres).
Bulk resistance is the ohmic resistance of the semiconductor material. The natural resistance of a "P" type or "N" type semiconductor material.
whats the answer
ml1- t-2
Paolo Silveri died in 2001.
Paolo Silveri was born in 1913.
Anastasia Silveri was born on 1984-06-09.
Luciano Silveri has written: 'Il teleriscaldamento' -- subject(s): Heating from central stations
bandgap has an importance role for conduction.if bandgap is max,the conduction of electron is min. and vice-versa.hence we can say that the bandgap desides the conductivity of any material(may be metal or nonmetal)
we all know that electrons,photons, phonons can excite an electron from valence band to conduction band...i think the main difference between electronic bandgap and optical bandgap is that in electonic its the energy required for an electron to move from the valence band to the conduction band.but in optical bandgap photons(packet of energy in the form of light waves) are assisting the electrons to move from valence band to conduction band.The difference between optical and electronic bandgap is more complexe actually. The optical bandgap is the one that can be measured using optical techniques (based on transmission and reflection, i.e. Tauc plot). However, this measurement does not take into account all traps you might have within the bandgap that can modify the energy required to move one charge carrier from the conduction band ans the conduction band. The electronic band gap (which is the one of interest in fine, in an integrated device) is measured under operation. Thus, for many devices (lasers, solar cells...etc.) the electronic bandgap (energy required to get the device working) can defer from the optical bandgap.
Optical bandgap means bandgap estimated using optical means or characterization. In simple words, let a light of different energies incident on the material. The material absorbs some energies and transmits some energies (the detector measures this). The threshold energy at which the material starts absorbing light is "Optical Bandgap". In a similar manner, electrical bandgap means bandgap estimated using electrical means or characterization. Here instead of measuring what light is observed of transmitted. You make electrical contacts for the material and measure the current instead of optical absorption. The incident light is of course absorbed, and carriers (electrons and holes) are generated in proportion to absorption. We measure current (nothing but charge which is proportional to absorption) and this current too shoots up at a threshold energy i.e. electrical bandgap.
Bandgap
becoz Si and Ge are indirect bandgap semiconductors. for lasing action direct bandgap semiconductors are required of the type In Ga As P
Nothing important at room temperature and with bulk plutonium; some formation of plutonium oxide.
Latter is not a specific stage or element name. Bulk or raw iron oxide has iron and oxygen in nonstoikiometric ratios between wustite, magnetite, hematite, and maghemite.
GaP in an indirect band gap material