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At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is?

Updated: 9/18/2023

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Q: At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is?

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At room temperature a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is?

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