A: There is no difference except for a zener its breakdown is known and predictable. Avalanche breakdown is not predictable and usually happens at hi voltage and because of it if the current is not limited it self destroy the device
A: An avalanche is a term describing a reverse uncontrollable breakdown of a device whereby if not limited the device will self destroy itself,
A zener however is not subject to this condition since the voltage will essentially remain the same as the voltage input increases.
EDIT:
The subatomic origin is different:
avalanche breakdown relies on electron-holes direct impact ionization.
It is an effect which increases with temperature and, thus, uncontrollable. When this effect occurs in diodes, it is usually due to circuit malfunction and it's destructive.
Zener breakdown relies on the quantum probability that electron and holes can cross the depletion region.
It is more controllable, since it decreases with temperature and, thus, it can "autostabilize". In fact, some diodes are used in this region in order to generate voltage references.
Avalanche breakdown occurs in lightly doped pn junctions where the depletion region is comparatively long. The doping density controls the breakdown voltage. The temperature coefficient of the avalanche mechanism is positive. That is, as the temperature increases, so does the reverse breakdown voltage magnitude of the temperature coefficient also increases with increasing breakdown voltage. For example, the temperature coefficient of a 8.2 V diode is in the range 3 - 6 mV/K while the temperature coefficient of an 18 V diode is in the range of 12 - 18 mV/K.
Zener breakdown occurs in heavily doped pn junctions. The heavy doping makes the depletion layer extremely thin. So thin, in fact, carriers can accelerate enough to cause impact ionization. With the depletion layer so thin, however, quantum mechanical tunneling through the layer occurs causing current to flow. The temperature coefficient of the Zener mechanism is negative the breakdown voltage for a particular diode decreases with increasing temperature. However, the temperature coefficient is essentially independent of the rated breakdown voltage, and on the order of -3 mV/K.
Zener breakdown happens at low voltages, whereas avalanche breakdown happens at higher voltages. So diode with 6.2v is having zener breakdown rest is avalanche breakdown in this case.
1. Differentiate Zener breakdown from avalanche breakdown? Zener Breakdown Avalanche breakdown 1.This occurs at junctions which being heavily doped have narrow depletion layers 2. This breakdown voltage sets a very strong electric field across this narrow layer. 3. Here electric field is very strong to rupture the covalent bonds thereby generating electronhole pairs. So even a small increase in reverse voltage is capable of producing large number of current carriers. ie why the junction has a very low resistance. This leads to Zener breakdown. 1. This occurs at junctions which being lightly doped have wide depletion layers. 2. Here electric field is not strong enough to produce Zener breakdown. 3. Her minority carriers collide with semi conductor atoms in the depletion region, which breaks the covalent bonds and electron-hole pairs are generated. Newly generated charge carriers are accelerated by the electric field which results in more collision and generates avalanche of charge carriers. This results in avalanche breakdown.
The difference between the pn-junction diode and the zener diode is that the pn-junction diode is used for rectification while the zener diode is used for rectification and stabilization. Also, the zener diode can function in the breakdown region while the pn-juntion diode can not function in that regime.
After breakdown voltage is reached in a zener diode the current increases drastically.
A: They are both diodes. The difference lies in the application. A rectifier is used to rectify AC current into pulsating current. The zener diode is used to regulate a voltage source to the zener voltage when connected in the reverse direction. ************************************************************** If you look at the characteristic curves of a rectifier diode and a zener diode, you will see that they are similar, but the reverse curve of the zener has a much sharper bend at what is called the "knee". It is at this point on the zener's curve at which it operates.
Avalanche is when you surpass the negative bias voltage threshold and the zener breaks, thermal breakdown would be putting too much current or voltage across the zener and burning it out.
effect of temperature on zener & avalanche breakdown
zener breakdown and avalanche breakdown.
Silicon "zener diodes" with a zener voltage rating of 5.6V or higher operate mainly by avalanche breakdown, so both the 6.2V and 24V "zener diodes" are avalanche breakdown type (not zener breakdown type).
Zener breakdown happens at low voltages, whereas avalanche breakdown happens at higher voltages. So diode with 6.2v is having zener breakdown rest is avalanche breakdown in this case.
Zener diodes and ordinary junction diodes are similar, except that zener diodes have additional doping to bring their reverse breakdown voltage into a more usable value, and to allow them to not destructively avalanche when they do conduct in the reverse direction.
avalanche
The difference between the avalanche diode (which has a reverse breakdown above about 6.2 V) and the Zener is that the channel length of the former exceeds the "mean free path" of the electrons, so there are collisions between them on the way out. The only practical difference is that the two types have temperature coefficients of opposite polarities.
Ther are generally Two types of Breakdown Phenomenons comes into picture. Namely- 1. Avalanche Breakdown 2. Zener Breakdown.
1. Differentiate Zener breakdown from avalanche breakdown? Zener Breakdown Avalanche breakdown 1.This occurs at junctions which being heavily doped have narrow depletion layers 2. This breakdown voltage sets a very strong electric field across this narrow layer. 3. Here electric field is very strong to rupture the covalent bonds thereby generating electronhole pairs. So even a small increase in reverse voltage is capable of producing large number of current carriers. ie why the junction has a very low resistance. This leads to Zener breakdown. 1. This occurs at junctions which being lightly doped have wide depletion layers. 2. Here electric field is not strong enough to produce Zener breakdown. 3. Her minority carriers collide with semi conductor atoms in the depletion region, which breaks the covalent bonds and electron-hole pairs are generated. Newly generated charge carriers are accelerated by the electric field which results in more collision and generates avalanche of charge carriers. This results in avalanche breakdown.
The difference between the pn-junction diode and the zener diode is that the pn-junction diode is used for rectification while the zener diode is used for rectification and stabilization. Also, the zener diode can function in the breakdown region while the pn-juntion diode can not function in that regime.
The difference is , the break down in a zener is desirable, well designed, expected, healthy and designed for a particular value. After breakdown, it can and is expected to maintain that condition for a long time. zener is optimized to work in this region.They are designed to have very low breakdown voltages. In contrast, the break down in a rectifier diode is undesirable, not well designed, not respected. This diode is optimized to work in the rectifier region and optimized for that. Breakdown region is avoided in normal operation. The breakdown voltage is normally very high, above 100 volts.