fet is a voltage controlled device...cut off voltage in fet refers to that voltage of the gate - source junction at which the current flow through channel is zero
fet is a voltage controlled device...cut off voltage in fet refers to that voltage of the gate - source junction at which the current flow through channel is zero
Saturation region(on) and Cut off region(off).
Remains constant
FET
5v
Pinch-off voltage in a Field Effect Transistor (FET) refers to the specific gate-to-source voltage at which the channel conducting current begins to 'pinch off' or constrict. Beyond this voltage, increasing the gate voltage does not significantly increase the drain current; instead, the current becomes relatively constant as the channel narrows and limits the flow of charge carriers. This phenomenon is crucial for the operation of FETs in saturation mode, where the device is used for amplification and switching applications.
A FET (Field Effect Transistor) is mainly used when the input signal needs to be isolated from the output. A FET has a very high input resistance, so very little current is required from the input. Voltage gain is not the main objective when using a FET.
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.
A Field-Effect Transistor (FET) can function as a voltage variable resistor by utilizing its gate voltage to control the channel conductivity. By applying a varying voltage to the gate, the FET alters the channel's resistance, allowing it to act like a variable resistor. This property is particularly useful in applications like analog signal processing and voltage-controlled amplifiers, where precise control of resistance is required. The FET's high input impedance also minimizes the loading effect on the preceding circuit, making it an effective choice for such applications.
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.
A Field Effect Transistor is a device with a single channel (conductor between two of the terminals). This channel is turned on an off by a voltage applied to the third terminal which is connected to the conducting channel in a J fet (junction Fet) or isolated from the channel in a Metal Oxide Semiconductor (MOS) fet. To keep the explanation simple, an enhacement mode MOS FET pulls charge carriers (electrons for N channel and holes for P channel) into the channel so its resistance decreases. This turns it on. By removing this voltage, charge carries move out of the channel and the FET turns off. It can be turned on partially by putting a small voltage on the control terminal called the GATE. In an N channel FET, the charge carriers (electrons) move from the SOURCE terminal (-ve) to the DRAIN terminal (+ve) when the FET is on. The voltage on the GATE is applied with respect to the SOURCE. In a P channel enhancement mode FET, charge carriers (holes) are also pulled into the channel in the same way but because the charge carriers are holes, the SOURCE is the +ve terminal and the DRAIN is the negative. The holes referred to are gaps in the crystal lattice of a substance like silicon which is doped (impurities added) with aluminum which has only 3 electrons in the outer shell instead of 4 like silicon. In a depletion mode FET, everything is the same except in reverse. Charge carriers are pushed OUT of the conducting channel.