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There are two primary types of transistors classified on the basis of power: bipolar junction transistors (BJT) and field effect transistors (FET).
Bipolar junction transistors are current-controlled devices, meaning that the amount of current flowing through the device is controlled by the voltage applied to the base electrode. The base-emitter voltage (VBE) and base-collector voltage (VBC) determine the amount of current flowing through the device. The current flowing through the device is given by the following equation:
I = β * (VBE - VBC)
Where β is the current gain of the transistor.
Field effect transistors are voltage-controlled devices, meaning that the voltage applied to the gate electrode controls the amount of current flowing through the device. The voltage applied to the gate electrode determines the width of the conducting channel between the source and drain electrodes. The current flowing through the device is given by the following equation:
I = μ * W * (VGS - VDS)
Where μ is the mobility of the carriers in the channel, W is the width of the conducting channel, VGS is the voltage applied to the gate electrode, and VDS is the voltage applied to the drain electrode.
David Denton
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Power transistors are transistors that are used in high-power amplifiers and power supplies.
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No it alternates the power from the circuit/circuits.
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Ralph C. Waggitt has written: 'Radiation effects on power transistors' -- subject(s): Effect of radiation on, Power transistors
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Transistors were shortly thereafter replaced by integrated circuits, which further minimized size and lessened power requirements.
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No...TIP31 is NPN. The complementary PNP is a TIP32. They are both large high power (40W) devices.
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Conductors, semiconductors and insulators.....
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