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The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.

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11y ago

A schottky diode is a metal-semiconductor junction, a p-n diode is a semiconductor-semiconductor junction.

  • schottky forward bias voltage is lower
  • schottky switching speed is faster
  • etc.
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Q: How do a schottky diode and ordinary pn junction differ in their operation?
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