It is difficult
a diode can be make using p-n junction....form a p junction n form a n junction...and after joining them u cn make a p-n junction diode....for making a diode u ll ve to face doping problems
the material in which using for doping is already neutral.,,so the pn-junction diode also neutral........
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
A Power Diode is used when a large current is involved which needs a larger junction to dissipate the heat generated. An advantage of using the Power Diode is it is able to withstand high voltage without being damaged. A disadvantage about the Power Diode is that being a large junction it is unable to stand high frequency applications.
The junction voltage of the circuit should be nearlyb 1.5 to 2v to be maintained which is fixed voltage...
The voltage across a Silicon Diode junction varies 0.00011 volts per degree Kelvin. Connect the diode to a high gain amplifier and the output of the amplifier to a DVM using an appopriate voltage scale.
we cannot make thyristor using two diodes. because the PN junction cannot be made when we connect with wires or solder it. that junction is only formed when we diffuse n material into a P material and vice versa.
The barrier potential of the silicon diode is 0.7v if the applied voltage across it is more than this voltage then PN-junction of the diode breaks, once pn-junction breaks the voltage across the diode is constant, since it breaks at 0.7 this voltage will be constant and not exceed for any further increase in applied voltage -inform.mayaprasad@gmail.com The voltage across junction will only exceed from 0.7 volt (for silicon diode) in the case of reverse biasing the applied total voltage will appear across p-n junction. ANSWER: .7 VOLTS is an arbitrarily chosen number since a diode any diode have an exponential curve V vs I . This number is chosen when using a diodes but there are times when a greater or lesser voltage is chosen to reflect the application and the current trough the diode determine that. Example a diode gate diode will be chosen as .6 volts rather then .7v and a heavy conducting rectifier may have .8 volt to reflect closely the true value of the diode drop during real conditions
its the simplest thing to do. There are three legs in a transistor, one each of collector, base and emitter. So if you need to use it as a diode, just connect either collector-base or emitter-base. Say, if you use an NPN transistor, then the base region will be the anode of diode and emitter or collector will be the cathode of the diode.
By giving proper gate triggering voltage... it can used to control the high power application like ordinary pn junction diode.
It can be either a junction or point contact diode built with semiconductor material. there are many types depending on intended usage.junction diode is produced as described in its name by forming a junction in the semiconductor by using opposite types of dopant impurities.point contact diode is produced as described in its name by taking a semiconductor base and pressing a sharp metal point on its surface.A few of the types of semiconductor diodes are: small signal, power rectifier, zener, tunnel, gunn, etc.
Peak Inverse Voltage, the maximum reverse bias (inverse) voltage that can be applied to the diode without damaging or destroying it. The work "peak" is used to remind you that when using the diode to rectify AC (or arbitrary waveforms) you must use the peak voltage, not the RMS voltage.