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at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
It is called as DOPING. Doping is the process in which you add an impurity to a pure semiconductor to increase its conductivity. While doping is done, crystal structure of semiconductor is not disturbed.
because they change a materiel's property from it original form (pure form), to a different property from due to doping fig of semiconductor distrot
Semiconductor in pure form (i.e. without doping) is called intrinsic or i-type semiconductor. The no of charge carrier in this case is determined by the materials itself only and not by the impurities. In an intrinsic semiconductor number of excited free electron is equal to the number of holes.
doping is done to increase the no. of holes in a semi conductor or to increase the no. of electron in order to conduct high amount of electricity , further info u can easily get from any 12th std. book.
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
Doping a semiconductor means to introduce impurities to the semiconductor in order to alter it. For the most part, doping a semiconductor increases its conductivity.
Doping is a process of adding some impurity in pure material or pure semiconductor.
Yes
electrons or holes depending on doping, as in any semiconductor.
it is metal.. so not used for doping.
Doping is a process of adding some impurity in pure material or pure semiconductor.
doping
Width of depletion layer is given by x = (2*ebsylum*Vb).5/(qN) x = width Vb = potential barrier q = charge of electron N = doping concentration. Thus increase in doping will reduce width of depletion layer.
It is called as DOPING. Doping is the process in which you add an impurity to a pure semiconductor to increase its conductivity. While doping is done, crystal structure of semiconductor is not disturbed.
Impurity
Very. Doping determines the conductivity, pure silicon is a good insulator.