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When sufficient forward voltage is applied across the junction, the electric field opposing the further diffusion of electrons from n-type to p-type semiconductor gets lost. The electric field created due to the application of the forward voltage opposes that of the barrier potential and finally vanishes the barrier completely.
What else can I help you with?
What types of transistors are the following - BJT PCT UJT SBT FET GJT AJT DFT?
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
What is a barrier voltage?
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
What does SBDT stand for electrically?
SBDT stands for Schottky Barrier Diode Transistor, which is a type of semiconductor device that combines the functions of a Schottky diode and a bipolar transistor in a single package.
Why potential across pn junction is called potential barrier?
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
What is the typical value of the barrier potential for a germanium diode?
The typical value of the barrier potential for a germanium diode is around 0.3 to 0.4 volts. This barrier potential is the voltage required to overcome the potential barrier at the junction of the diode and allow current flow in the forward direction.
Which is greater the breakdown voltage or the barrier potential?
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
Why you bias in jfet transistor in nano ampere?
A: A FET has a very hi impedance it requires mostly potential as opposed to current like a transistor does,
Why can't the potential barrier of a diode be used as a voltage source?
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
Is barrier potential temperature dependent?
Yes, the barrier potential in a semiconductor diode is temperature dependent. As temperature increases, the barrier potential decreases due to changes in the band gap energy and carrier density, leading to increased leakage current. Conversely, as temperature decreases, the barrier potential increases, reducing the leakage current.
Compare the characteristics of a silicon and germanium diode?
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
What happen to barrier potential when temperature increases?
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
What happens to the barrier potential when the temperature increases?
When the temperature increases, the barrier potential in a semiconductor diode decreases. This is due to the increase in carrier density at higher temperatures, which results in more charge carriers being available to pass through the barrier. Ultimately, this leads to a lower resistance across the diode and a decrease in the potential barrier.
