When sufficient forward voltage is applied across the junction, the electric field opposing the further diffusion of electrons from n-type to p-type semiconductor gets lost. The electric field created due to the application of the forward voltage opposes that of the barrier potential and finally vanishes the barrier completely.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
A: A FET has a very hi impedance it requires mostly potential as opposed to current like a transistor does,
0.3 volt
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
Yes, it varies inversely, i.e. as temperature increases the barrier potential decreases. It decreases by 2mV for degree Celsius rise of temperature.
Forward bias is when the height of the depletion layer is reduced such that a greater number of majority charge carriers have sufficient energy to overcome the potential barrier while revers bias is when the height of the potential barrier is increased so that very few majority charge carriers have sufficient energy to surmount the potential barrier. All the above phenomena takes place when a potential barrier is applied across the pn junction.