When the pn junction is forward biased,the height of the potential barrier is reduced allowing more majority charge carriers ti flow across the junction and when it is reversed biased, the height of the potential barrier increases there b reducing the majority charge carrier that have sufficient energy to flow across the junction.
due to attraction between positive and negative charge,they form neutral atoms forming depletion layer
What is the cause of reverse recovery time in a pn junction diode
As we bring P type and N type semiconductors fused together, then rich holes in P type would get neutralized with some rich electrons in N type. Hence at the juntion region, there will not be charge carriers ie holes and electrons. So it is known as Depletion Region. Depletion means emptying something. In case of ordinary diode this depletion region would be wider where as in case of Zener Diode the depletion region would be narrower. This is because the semiconductors are heavily doped. Hence potential barrier would be easily built up even with a thin region where holes and electrons get combined for neutrelization.
It is one junction i.e. P-N junction diode.
When p-n junction of a diode reversed biased then majority carriers are not able to cross the junction and are attracted in respective regions.So current becomes approximately zero.But because of minority carriers a reverse current keeps flowing.It is called Reverse Saturation Current.And due to attraction towards sides,charges go away from junction.So width of depletion reason increases.
another name for diode is "pn" junction.
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
What is the cause of reverse recovery time in a pn junction diode
they ARE, but only in close proximity (at the junction). this is what creates the depletion region around the junction: electrons being attracted to holes and falling in. once the depletion region gets wide enough attraction stops.
The critical value of the voltage, at which the breakdown of a P-N junction diode occurs is called the breakdown voltage.The breakdown voltage depends on the width of the depletion region, which, in turn, depends on the doping level. The junction offers almost zero resistance at the breakdown point.
As we bring P type and N type semiconductors fused together, then rich holes in P type would get neutralized with some rich electrons in N type. Hence at the juntion region, there will not be charge carriers ie holes and electrons. So it is known as Depletion Region. Depletion means emptying something. In case of ordinary diode this depletion region would be wider where as in case of Zener Diode the depletion region would be narrower. This is because the semiconductors are heavily doped. Hence potential barrier would be easily built up even with a thin region where holes and electrons get combined for neutrelization.
It is one junction i.e. P-N junction diode.
a diode can be make using p-n junction....form a p junction n form a n junction...and after joining them u cn make a p-n junction diode....for making a diode u ll ve to face doping problems
When p-n junction of a diode reversed biased then majority carriers are not able to cross the junction and are attracted in respective regions.So current becomes approximately zero.But because of minority carriers a reverse current keeps flowing.It is called Reverse Saturation Current.And due to attraction towards sides,charges go away from junction.So width of depletion reason increases.
The thickness of the depletion region or depletion layer (and there are other terms) varies as the design of the semiconductor. The layers in a semiconductor are "grown" (usually by deposition), and this can be controlled. The typical depletion region thickness in an "average" junction diode is about a micron, or 10-6 meters. Junction "construction" presents major engineering considerations to those who design and make semiconductors as there are many different kinds. A link is provided to the section on the width of depletion regions in the Wikipedia article on that topic.
When a diode is made (ie. NO current pass through the diode) then depletion layer is form between N & P.
Schottky Diode
diode is unipolar