Difference between Schottky Barrier Diode and P-N Junction Diode is as following...
Schottky Diode1) Usually using the aluminum metal which is trivalent element.2) Depletion layer is thinner than the p-n junction diode.
3) Forward threshold voltage is smaller than p-n junction diode(0.1V).
4) The junction capacitance is lower than p-n junction diode.
P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure.2) Depletion layer is wider than Schottky diode.
3) Forward threshold voltage is higher than Schottky diode(0.6V)
4) The junction capacitance is higher than Schottky diode.
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
In step-graded the acceptor and donor concentrations in the semiconductor are constants up to the junction.In a linearly-graded junction, impurity concentration varies linearly with distance from the junction
Forward biasing can be satisfied when a positive polarity of a battery connect with P side and the negative connect with N side In the P-N junction, that is caused : The free electrons in the N side will pushed by negative charge, and holes move far of positive charge, after that we will have a barrier (small area of barrier between P and N) this biasing called Forward biasing, because of small resistance of barrier, the current will flow, we can use it as a switch. the Reverse biasing is the opesit of all these specifications.
The difference between the pn-junction diode and the zener diode is that the pn-junction diode is used for rectification while the zener diode is used for rectification and stabilization. Also, the zener diode can function in the breakdown region while the pn-juntion diode can not function in that regime.
ZENER DIODE IS MADE TO REVERSE BREAK OVER AT A CERTAIN VOLTAGE the break over knee is not exactly sharp especially in low voltage zeners. and p-n means positive and negative junction
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
The difference between central and junction stations are their locations. A junction station is usually close to a junction station while central stations are not.
When a p-n junction is formed then holes and electrons combine near the junction and some portion near the junction neutralizes.Now more electrons and holes cannot combine because of the existence of the neutral layer.They need energy to cross that layer.This raises a resistance between the flow of electrons and holes.This gives rise to the barrier voltage.
A gap junction is a '' tunnel '' between cells in which messages and nutrients can be passed back and forth. A tight junction is the connection between two cells that is strongly '' sown '' with protein threads to help maintain tissue conformation.
Barrier contraceptive is a condom, and chemical contraceptive is spermicide.
Thermocouples are two junctions of two dissimilar metal conductors. One junction is the sensing junction and the other is the reference junction. The voltage between the two junctions depends on the temperature difference between the junctions (Seebeck effect). The voltage can be measured and the temperature difference determined based on known readings of the voltage produced by the metals. If the temperature of the reference junction is known, then the temperature of the sensing junction can be calculated.
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
pn junction diode conducts current in one directions where as the zener diode conducts in both the directions. large current flow damage the PN junction diode but zener diode conducts eventhough there is a large current........
tight junctions
When the pn junction is forward biased,the height of the potential barrier is reduced allowing more majority charge carriers ti flow across the junction and when it is reversed biased, the height of the potential barrier increases there b reducing the majority charge carrier that have sufficient energy to flow across the junction.
They are very similar, but barrier beaches form in front of a inlet or harbour, but bars from where the sea and a river meet
They are very similar, but barrier beaches form in front of a inlet or harbour, but bars from where the sea and a river meet