Forward biasing can be satisfied when a positive polarity of a battery connect with P side and the negative connect with N side In the P-N junction, that is caused :
The free electrons in the N side will pushed by negative charge, and holes move far of positive charge, after that we will have a barrier (small area of barrier between P and N) this biasing called Forward biasing, because of small resistance of barrier, the current will flow, we can use it as a switch.
the Reverse biasing is the opesit of all these specifications.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
Fixed Bias,Self Bias, Forward Bias, Reverse Bias
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
To know if a transistor is PNP or an NPN,the following should be verified:For a PNP transistor, the base-collector junction is forward biased while the base-emitter junction is reversed biased.For an NPN transistor, the base-emitter junction is forward biased while the base -collector junction is reversed biased.
The approximate voltage across the forward-biased base-emitter junction is 0.7 volts.
There are 2 type of biasing in PN junction didoe Forward biasing Reverse biasing
When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
This is a characteristics of semiconductor diode {pn junction}.In forward biasing here we connect p to positive terminal and n -ve terminal when external voltage is aplied in such a direction that cancels out potential barrier thus permitting current flow In reverse biasing the connection of pn junction is inverted but in this the potential barrier incresesand offers resistance to current flow but at a certain voltage current increases suddenly(the break down voltage)the zener diode works in this principle
on forward biasing width of the depletion layer decreases whereas on reverse biasing the width of depletion layer increases.
in forward biasing depletion region width decreases and in reverse biasing it increases .
to get the base- emitter junction forward bias we should connect the negative of the diode with the negative of the battery and the positive of the diode with the positive of the diode so we should connect negative source in the emitter
A conducting junction.
Fixed Bias,Self Bias, Forward Bias, Reverse Bias
yes
voltage divider biasing
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.