yes
The threshold voltage (V_th) of a MOSFET is influenced by the biasing of the substrate, or body, due to the body effect. When a negative voltage is applied to the substrate relative to the source, the depletion region widens, effectively increasing the threshold voltage. Conversely, if the substrate is biased positively, the threshold voltage decreases. This modulation of V_th through substrate biasing allows for better control of the device's electrical characteristics.
Biasing a diode refers to the process of applying a voltage across its terminals to control its conductive state. Forward biasing occurs when the positive terminal of the voltage source is connected to the anode and the negative to the cathode, allowing current to flow through the diode. Conversely, reverse biasing connects the positive terminal to the cathode and the negative to the anode, preventing current flow. Proper biasing is essential for the diode to function effectively in circuits, such as rectifiers and signal modulation.
voltage divider biasing
the voltage at which electronic device operates is callled threshold voltageand the voltage at which device show cinduction in forward biased stste
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
This is a characteristics of semiconductor diode {pn junction}.In forward biasing here we connect p to positive terminal and n -ve terminal when external voltage is aplied in such a direction that cancels out potential barrier thus permitting current flow In reverse biasing the connection of pn junction is inverted but in this the potential barrier incresesand offers resistance to current flow but at a certain voltage current increases suddenly(the break down voltage)the zener diode works in this principle
Biasing a diode refers to the process of applying a voltage across its terminals to control its conductive state. Forward biasing occurs when the positive terminal of the voltage source is connected to the anode and the negative to the cathode, allowing current to flow through the diode. Conversely, reverse biasing connects the positive terminal to the cathode and the negative to the anode, preventing current flow. Proper biasing is essential for the diode to function effectively in circuits, such as rectifiers and signal modulation.
The threshold voltage of a device, such as a transistor, depends on its physical structure and material properties, such as channel length, channel doping concentration, oxide thickness, and gate material. It is also affected by external factors like temperature and supply voltage. In digital circuits, the threshold voltage is a critical parameter that determines the device's switching behavior.
voltage divider biasing
the voltage at which electronic device operates is callled threshold voltageand the voltage at which device show cinduction in forward biased stste
One voltage is greater in thyristor whether forward breakover or reverse breakdown voltage. The greater of the two voltages in thyristor is forward breakover voltage.
It is stated that one of the voltage is greater in thyristor whether it be forward breakover or reverse breakdown voltage. It is also stated that the greater of the 2 voltages in thyristor is the forward breakover voltage.
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
forward breakover voltage is slightly smaller than reverse breakdown voltage
In a Silcon diode no current flows in the forward direction (anode to positive voltage) until approximately 0.6 - 0.7Volts is reached. Above this voltage the current rises in line with Ohms Law. In the reverse direction only micro Amps flow (leakage current) In a Germanium diode the threshold is about 0.2 volts and reverse leakage is higher.
Let me answer as I've learned. In this case, if the voltage source for forward bias is greater than the voltage source for reverse bias, current will flow in this semiconductive diode. And another way may occur. That is, in case reverse bias voltage is as large as breakdown voltage, reverse breakdown current ,which is because of the minority carrier in p region, will flow and this current can be large to damage the diode. If there is any mistake in my answer, please correct me and I'll thank you for that.