0
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons.
when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
What else can I help you with?
What happens in the depletion region in reverse bias?
in forward biasing depletion region width decreases and in reverse biasing it increases .
How drain current is controlled in JFET?
The gate voltage controls the extent of depletion layer and thereby controls the width of the channel. As the width of the channel varies, current also varies. Width of the channel is inversly proportional to drain current.
What will be the result on increase of applied voltage but below the depletion barrier in a reverse biased diode?
When the applied voltage is increased in a reverse-biased diode but remains below the depletion barrier, the width of the depletion region will increase, leading to a higher electric field across the junction. This results in a minimal increase in the reverse current, primarily due to the thermal generation of minority carriers. However, the diode will not conduct significantly until the breakdown voltage is reached, at which point a rapid increase in current occurs.
What is NP junction capacitance?
NP junction capacitance refers to the capacitance associated with the depletion region of a p-n junction diode when a voltage is applied across it. This capacitance varies with the applied bias voltage, as the width of the depletion region changes, affecting the charge storage capability. It plays a crucial role in the frequency response and dynamic behavior of semiconductor devices, especially in applications like radio frequency and high-speed electronics. The capacitance can be modeled using the junction's built-in potential and doping concentrations.
What is the width of depletion region of tunnel diode?
0.1 micron
What effect of depletion layer by biasing?
on forward biasing width of the depletion layer decreases whereas on reverse biasing the width of depletion layer increases.
What happens in the depletion region in reverse bias?
in forward biasing depletion region width decreases and in reverse biasing it increases .
How drain current is controlled in JFET?
The gate voltage controls the extent of depletion layer and thereby controls the width of the channel. As the width of the channel varies, current also varies. Width of the channel is inversly proportional to drain current.
How depletion region is narrowed during forward biasing?
When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
Does depletion region width becomes zero?
Exactly in forward bias wen internal barrier potential is compensated by external voltage.,
If the impurity concentration is increased how the depletion width effected?
depletion layer decreases
What is difference between early effect and punch through in BJT?
When we apply reverse bias voltage to input and output sides of a BJT, then the width of the depletion layer at emitter-base and base-collection got increased. Due to which the effective base width got decreased. This phenomenon of reduction in the base width is called Early effect. And if we go on increasing the Reverse bias voltage then at a time instant the width of the base becomes zero and this effect is called punch through effect and that reverse bias voltage is called punch through voltage.
How temperature effects depletion layer width?
As temperature increases, the depletion layer width in a semiconductor decreases due to the increased thermal energy disrupting the balance of charges within the material. This disrupts the formation of the electric field that maintains the width of the depletion layer, causing it to shrink. Conversely, at lower temperatures, the depletion layer tends to widen as charges are less mobile and the electric field is more pronounced.
What is breakdown voltage of diode?
The critical value of the voltage, at which the breakdown of a P-N junction diode occurs is called the breakdown voltage.The breakdown voltage depends on the width of the depletion region, which, in turn, depends on the doping level. The junction offers almost zero resistance at the breakdown point.
What will be the result on increase of applied voltage but below the depletion barrier in a reverse biased diode?
When the applied voltage is increased in a reverse-biased diode but remains below the depletion barrier, the width of the depletion region will increase, leading to a higher electric field across the junction. This results in a minimal increase in the reverse current, primarily due to the thermal generation of minority carriers. However, the diode will not conduct significantly until the breakdown voltage is reached, at which point a rapid increase in current occurs.
What is NP junction capacitance?
NP junction capacitance refers to the capacitance associated with the depletion region of a p-n junction diode when a voltage is applied across it. This capacitance varies with the applied bias voltage, as the width of the depletion region changes, affecting the charge storage capability. It plays a crucial role in the frequency response and dynamic behavior of semiconductor devices, especially in applications like radio frequency and high-speed electronics. The capacitance can be modeled using the junction's built-in potential and doping concentrations.
How does doping effect the depletion layer in semiconductor?
Width of depletion layer is given by x = (2*ebsylum*Vb).5/(qN) x = width Vb = potential barrier q = charge of electron N = doping concentration. Thus increase in doping will reduce width of depletion layer.
