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How depletion width varies with biasing voltage?
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
What happens in the depletion region in reverse bias?
in forward biasing depletion region width decreases and in reverse biasing it increases .
What will be the result on increase of applied voltage but below the depletion barrier in a reverse biased diode?
When the applied voltage is increased in a reverse-biased diode but remains below the depletion barrier, the width of the depletion region will increase, leading to a higher electric field across the junction. This results in a minimal increase in the reverse current, primarily due to the thermal generation of minority carriers. However, the diode will not conduct significantly until the breakdown voltage is reached, at which point a rapid increase in current occurs.
What is the value of the transition capacitance for a silicon diode when VD 0?
The transition capacitance of a silicon diode, often referred to as junction capacitance, depends on the applied voltage across the diode. When the diode is reverse-biased (VD < 0), the transition capacitance is positive and becomes larger as the reverse voltage increases. However, when VD = 0, the transition capacitance is at its minimum value, which can be approximated using the formula (C_j = \frac{\epsilon A}{W}), where (W) is the depletion width, (A) is the junction area, and (\epsilon) is the permittivity of the semiconductor material. At VD = 0, the depletion region is narrow, resulting in a relatively small capacitance.
Why Reduction in Depletion region width with increase in doping?
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
How depletion width varies with biasing voltage?
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
What happens in the depletion region in reverse bias?
in forward biasing depletion region width decreases and in reverse biasing it increases .
What will be the result on increase of applied voltage but below the depletion barrier in a reverse biased diode?
When the applied voltage is increased in a reverse-biased diode but remains below the depletion barrier, the width of the depletion region will increase, leading to a higher electric field across the junction. This results in a minimal increase in the reverse current, primarily due to the thermal generation of minority carriers. However, the diode will not conduct significantly until the breakdown voltage is reached, at which point a rapid increase in current occurs.
What is breakdown voltage of diode?
The critical value of the voltage, at which the breakdown of a P-N junction diode occurs is called the breakdown voltage.The breakdown voltage depends on the width of the depletion region, which, in turn, depends on the doping level. The junction offers almost zero resistance at the breakdown point.
What is the thickness of the depletion layer in a semiconductor?
The thickness of the depletion region or depletion layer (and there are other terms) varies as the design of the semiconductor. The layers in a semiconductor are "grown" (usually by deposition), and this can be controlled. The typical depletion region thickness in an "average" junction diode is about a micron, or 10-6 meters. Junction "construction" presents major engineering considerations to those who design and make semiconductors as there are many different kinds. A link is provided to the section on the width of depletion regions in the Wikipedia article on that topic.
What is meant by transition and space charge capacitance of a diode?
space charge region in a diode or say a bjt for better understanding is same as the depletion region, both transition capacitance and depletion capacitance are the same c= (epsilon*A)/d ; where ... c is capacitance A is area and d is the depletion width the other type of capacitance is the diffusion capacitance c= (T*I)/(n*V) where ... c is the capacitance T is transition ti me I is the drift current n is emission coefficient ... its value is 1 for germanium and V is thermal voltage .. 26mv
Why depletion layer width at the collector junction are more than the depletion layer width at the emitter junction?
The depletion layer width at the collector junction is typically wider than that at the emitter junction due to the differences in doping concentrations. The collector region is generally lightly doped compared to the heavily doped emitter region, resulting in a larger electric field and a broader depletion region. Additionally, the collector junction must accommodate a higher reverse bias, which further expands the depletion region to maintain charge neutrality and facilitate efficient charge separation.
What is the value of the transition capacitance for a silicon diode when VD 0?
The transition capacitance of a silicon diode, often referred to as junction capacitance, depends on the applied voltage across the diode. When the diode is reverse-biased (VD < 0), the transition capacitance is positive and becomes larger as the reverse voltage increases. However, when VD = 0, the transition capacitance is at its minimum value, which can be approximated using the formula (C_j = \frac{\epsilon A}{W}), where (W) is the depletion width, (A) is the junction area, and (\epsilon) is the permittivity of the semiconductor material. At VD = 0, the depletion region is narrow, resulting in a relatively small capacitance.
What effect of depletion layer by biasing?
on forward biasing width of the depletion layer decreases whereas on reverse biasing the width of depletion layer increases.
Does depletion region width becomes zero?
Exactly in forward bias wen internal barrier potential is compensated by external voltage.,
If the impurity concentration increasedhow depletion width effected?
As impurity concentration increases in a semiconductor, the depletion width generally decreases. This occurs because higher impurity levels enhance the charge carrier concentration, which allows the electric field to more effectively counteract the diffusion of carriers, narrowing the depletion region. Essentially, more dopants lead to a stronger electric field that limits the extent of the depletion zone.
If the impurity concentration is increased how the depletion width effected?
depletion layer decreases
