supposed to be MOSFET. but i also depends on your working freq.
Power FET
It depends what you mean by a 'high rating'!If you mean a high 'voltage rating' then, yes, you will require thicker insulation. But if you mean a high 'power rating', then, not necessarily, because the voltage can be low, while the current is high.Remember, the thickness of insulation depends on the voltage, while the type of insulation (how it withstands higher temperatures) depends on the current.
A depletion MOSFET is a MOSFET that is normally on. It outputs maximum current when the gate-source voltage is 0V. As the gate-source voltage increases, the drain-source channel becomes more resistive and the current decreases. An enhancement MOSFET has the opposite behavior. It is normally off. It outputs no current when the gate-source voltage is 0V. As the gate-source voltage increases, the drain-source channel becomes less resistive and the current increases.
high...
it can exchange the current is much larger and has Avery low resistance when it is turned on.the mosfet is not removed from the circuit when the supply is on because it flow the high current.
The SiO2 layer acts as an insulator and also it provides high input impedance to the MOSFET. This insulation is needed so that a circuit with high EMI or loads which generate back emf (motors) can be driven by applying gate current from a common circuit.
No because a mosfet does not work the same as a thyristor. In a thyristor the current flows even when the gate pulse is removed, until the current stops. That is not the case for a FET.
the current in mosfet is controlled by electric field where as in poto diode is controlled by intensity of light
Since the logic operations of depletion MOSFET is the opposite to the enhancement MOSFET, the depletion MOSFET produces positive logic circuits, such as, buffer, AND, and OR. The most significant advantage of the positive logic circuits is that it can produce positive feedback easily so that a single depletion MOSFET can become a memory cell. In contrast, you will need at least two enhancement MOSFET transistor to produce the positive feedback to build a memory cell. The other advantages of depletion MOSFET are that it is free from sub-threshold leakage current and gate-oxide leakage current. Since there is always a potential difference of Vdd between the gate terminal and channel for an enhancement MOSFET to cause the gate-oxide leakage current, the gate oxide leakage current is unavoidable when the transistor shrinks in size and oxide layer becomes thinner. The depletion MOSFET does not have this problem because there is no potential difference between the gate and channel. As a enhancement MOSFET shrinking in size, there is no way to stop the subthreshold leakage current diffused across from source to drain because the drain and source terminals are closer physically. This is not a problem for depletion MOSFET because a pinched channel will stop the diffusion current completely. The depletion MOSFET is the ideal, perfect transistor. The only disadvantage of depletion MOSFET is its inability to produce negative logic operations.
MOSFET has high input impedance and offer input signal isolation from the circuit
supposed to be MOSFET. but i also depends on your working freq.
Do you mean "can current flow in both directions"? In theory, yes.
Power FET
An enhancement MOSFET doesn't conduct current across the drain to source unless a voltage is applied to the gate. When sufficient voltage is applied to the gate of the transistor, currents flows from drain to source. A MOSFET acts as a switch or amplifier in a circuit.
In simple MOSFET current mirror, the load current does not follow a linear relationship with reference current (ie for short channel MOSFET's multiplying factor due to channel length modulation cannot be neglected). But by cascoding the output resistance can be increased and since output resistance follows an inverse relationship with lambda (channel-length modulation parameter), the multiplying factor due to channel length modulation reduces to one and a linear relationship is obtained between reference and load current.
It depends what you mean by a 'high rating'!If you mean a high 'voltage rating' then, yes, you will require thicker insulation. But if you mean a high 'power rating', then, not necessarily, because the voltage can be low, while the current is high.Remember, the thickness of insulation depends on the voltage, while the type of insulation (how it withstands higher temperatures) depends on the current.