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bipolar devices use both majority and minority current carriersunipolar devices use only majority current carriers
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
Power FET
It is modeled as a 2-port "black box", where the input terminals accept a current (and are modeled by 'zero' resistance to that current), and the output is a function of the input current. the output may be a voltage or current (or other varying physical parameter, such as resistance). A bipolar transistor is well modeled as a current controlled device. The collector (output) current is a function of the base current: Ic = Beta * Ib. The hybrid-pi model changes that from a current controlled device to a voltage controlled device: Ic = F(Vbe), but the BJT transistor is still basically a current controlled device.
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
bipolar devices use both majority and minority current carriersunipolar devices use only majority current carriers
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
BJT(Bipolar junction Transistor)-It is bipolar device -meaning both electron and holes are responsible for conduction.-It is mainly used for amplification and switching purposes.-It is current controlled device.MOSFET(Metal Oxide Semiconductor Field Effect Transistor)-It is unipolar device -meaning only one of the charge carriers is responsible for conduction.-It has very high input resistance.Due to this reason it is used in initial stage of Operational amplifier.-It is voltage controlled device.
Bipolar junction transistor(BJT)
The Bipolar junction transister was invented in 1947 at Bell Labs. This was actually the first successfully constructed semiconductor device. But the theory and idea for semiconductors went back to the mid 1920's, and the first patent for a semiconductor device was issued in about 1936 to Julius Lilienfeld.
A very high speed bipolar junction transistor having a metal-semiconductor emitter base junction instead of a semiconductor-semiconductor emitter base junction.
N is the type of semiconductor, MOS refers to Metal Oxide Semiconductor device.
N is the type of semiconductor, MOS refers to Metal Oxide Semiconductor device.
UJT(UNIJUNCTION TRANSISTOR) is a three-lead electronic-semiconductor device with only one junction that exclusively as an eletrically controlled swtich andit is not used as a linear amplifier.
Power FET
The FET is a semiconductor device with the output current controlled by an electric field. Since the current is carried predominantly by one type of carriers, the FET is known as a unipolar transistor.
It is modeled as a 2-port "black box", where the input terminals accept a current (and are modeled by 'zero' resistance to that current), and the output is a function of the input current. the output may be a voltage or current (or other varying physical parameter, such as resistance). A bipolar transistor is well modeled as a current controlled device. The collector (output) current is a function of the base current: Ic = Beta * Ib. The hybrid-pi model changes that from a current controlled device to a voltage controlled device: Ic = F(Vbe), but the BJT transistor is still basically a current controlled device.