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Reverse saturation current of germanium diode

The current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.

At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.

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Q: Reverse saturation current of Ge diode?
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Practical of to determine energy band gap of semiconductor diode by determining variation of saturation current with temperature?

Connect p-n junction in reverse bias applying 5 Volt DC. Keep it in controlled heating device If diode is made up of Ge increase temp upto 50 C For Silicon temp. should be raised to 125 C For Ge heat up to 50 C and switch off heating. record current in ammeter (micro Amps) with each 5 C decrease in temp. Plot graph of 1000/Temp. on X-Axis Vs. Log of Saturation current Is. Calculate Slope of straight line obtained Band gap(eV) = slope/5.036


What is the typical value of the barrier potential for a silicon diode?

Forward biase the given diode by using a Variable resistor in the circuit. By adjusting the value of variable resistor you will adjust the voltage being applied to junction diode. First adjust the resistance such that no(negligble) current flows through the circuit. Now start decreasing the value of resistance. Note the voltage across resistor(Vr) when current just starts flowing through the circuit. Then Potential barrier of diode will be: Vb=V-Vr Vb:Barrier Potential V:Battery Voltage Vr:Voltage Drop across resistance when current just starts flowing through the circuit.


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becoz Si and Ge are indirect bandgap semiconductors. for lasing action direct bandgap semiconductors are required of the type In Ga As P


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Look at its nameplate. Divide its power rating by its voltage rating -this will tell you how much current flows when the refrigerator is running on its cooling cycle.

Related questions

Practical of to determine energy band gap of semiconductor diode by determining variation of saturation current with temperature?

Connect p-n junction in reverse bias applying 5 Volt DC. Keep it in controlled heating device If diode is made up of Ge increase temp upto 50 C For Silicon temp. should be raised to 125 C For Ge heat up to 50 C and switch off heating. record current in ammeter (micro Amps) with each 5 C decrease in temp. Plot graph of 1000/Temp. on X-Axis Vs. Log of Saturation current Is. Calculate Slope of straight line obtained Band gap(eV) = slope/5.036


What are the difference between Ge and Si diode?

the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev


What is value of dynamic resistance oe p-n junction diode?

Rd= Vt*c/I Vt=KT/q, K=Boltzmann constant C= constant 2 for si 1 for Ge I current through the diode


Mention cut-in-voltage for Si and Ge diode?

0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.


What is the Difference between Si and Ge diodes?

The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.


Which has higher leakage current-Si or Ge?

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What is the typical value of the barrier potential for a silicon diode?

Forward biase the given diode by using a Variable resistor in the circuit. By adjusting the value of variable resistor you will adjust the voltage being applied to junction diode. First adjust the resistance such that no(negligble) current flows through the circuit. Now start decreasing the value of resistance. Note the voltage across resistor(Vr) when current just starts flowing through the circuit. Then Potential barrier of diode will be: Vb=V-Vr Vb:Barrier Potential V:Battery Voltage Vr:Voltage Drop across resistance when current just starts flowing through the circuit.


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A diode allows current to pass in one direction only, and has two pins - Anode and Cathode. A transistor is a switch that has three pins - Collector, Base, Emitter, and a current can pass between the collector and emitter if there is a current on the base. A picture of diodes and transistors can be found here (left to right: diode, transistor, transistor, LED - diode that lights up): http://www.mediafire.com/imageview.php?quickkey=zmwz5and0lm&thumb=6


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Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.


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