Transistor failure can occur due to a variety of reason. The following are some of them.
Age
Aging of transistor due to temperature variations inside the components due to carrying current can cause failure. The electrical properties of the materials inside can drift due to age.
External Causes
External causes such as spikes in the power supply, heat, mechanical damage can also result in transistor failures. Hence, all transistors should be adequately protected against overvoltage.
Poor Circuit design.
Improperly chosen components and wrong circuit design can also result in transistor failure. Hence, all components in the circuit should be properly rated with sufficient allowance for overloading and temperature rise. The failure of one component can lead to cascade failures of other components.
Overheating
Overheating is the most common cause of transistor failure. Hence, it is important that transistors be provided with cooling mechanism. Devices which contain temperature-sensitive electronic components should be kept in air conditioned environments.
Electrostatic Discharge
Electrostatic discharge can also damage transistors. Hence proper precautions against Electrostatic Discharge Should be taken.
current carriers
If the EBJ is forward baise and the CBJ is reverse baised then the transistor will in the active/forward mode of operation.
Reverse-biased ---from the book of Malvino
False. For normal operation, an NPN transistor will have the base be more positive than the emitter and less positive than the collector, with the collector more positive than the emitter. Whether the base is grounded or not depends on the chosen design configuration of the circuit.
A: Linear operation has nothing to do with voltage. It is a function of voltage vs current at a particular load. Most transistors have a very linear parameters at low current but at hi current the linearity changes and for some transistor drastically. So choosing a transistor for amplification is different then from choosing for a switch application.
Very nonlinear. If you need operation approximatinglinearity, a transistor must be limited to a very narrow range of operation.
In class c operation, the transistor conducts 100% of the time.
current carriers
Emitter-Base junction should be forward biased.Collector-Base junction should be reverse biased.
We bias transistors in order to determine the modes of operation ( that is whether the transistor is operating in the active cut off or the saturation regions).
If the EBJ is forward baise and the CBJ is reverse baised then the transistor will in the active/forward mode of operation.
Reverse-biased ---from the book of Malvino
A: An operating in biasing is determined by the transistor capabilities as a linear amplifier. Basically it is a bias to insure linear operation with the loading of the output
That depends on whether you are considering conventional current or electron current.
A load line is used in graphic analysis of circuits, having both linear and non-linear parts, representing the constraint the other parts of the circuit put on the non-linear transistor. It represents the response of the linear circuit connected to the transistor. The DC load line describes the DC operation of a transistor graphically.
False. For normal operation, an NPN transistor will have the base be more positive than the emitter and less positive than the collector, with the collector more positive than the emitter. Whether the base is grounded or not depends on the chosen design configuration of the circuit.
# parameter are usually the base current ib,collector current ic,emitter current ie,collector emitter voltagevce,base emitter voltagevbe,collector base voltagevcb which decide the operation &output of the transistor