It is the CE (collector - emitter) voltage at a given collector current when the transistor is fully on. Increasing the base current will not lower the CE voltage any more once saturation has been reached.
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
it is the collector voltage multiplied by the sum of all the currents.
The base-emitter voltage of a BJT is dependent on temperature and current. The minimum voltage ranges from 0.6V to 0.7V. Anything less, and the transistor goes into cutoff. As far as "proper voltage" is concerned, it is more correct to say "proper current", because that is the basis for the BJT - it is a current amplifier, not a voltage amplifier. The proper current depends on the particular biasing design of the circuit at hand.
Bipolar junction transistors has two junctions base emitter junction, base collector junction. Accordingly there are four different regions of operation in which either of the two junctions are forward biased reverse biased or both. But the BJT can be effectively operated in there different modes according to the external bias voltage applied at each junction. i.e. Transistor in active region, saturation and cutoff. The other region of operation of BJT is called as inverse active region.
Cut-off and saturation
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
the common collector can use as voltage buffer
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
The Self Bias of the BJT is also called the voltage divider bias. It is called thus because it can stabilize the collector current, the base emitter voltage and the amplification factor.
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
it is the collector voltage multiplied by the sum of all the currents.
0.3 V
BJT is a example for current controll device. And JFET is a voltage controlled device.
An advantage of JFET is stable high current operation. A disadvantage of JFET is low capacitance. An advantage of BJT is constant voltage operation. A disadvantage of BJT is low thermal conductance.
For MOS fabrication, wafers with crystal orientation <100> are used. This helps achieve a lower threshold voltage and for BJT <111> orientation is preferred.
The base-emitter voltage of a BJT is dependent on temperature and current. The minimum voltage ranges from 0.6V to 0.7V. Anything less, and the transistor goes into cutoff. As far as "proper voltage" is concerned, it is more correct to say "proper current", because that is the basis for the BJT - it is a current amplifier, not a voltage amplifier. The proper current depends on the particular biasing design of the circuit at hand.