The Self Bias of the BJT is also called the voltage divider bias. It is called thus because it can stabilize the collector current, the base emitter voltage and the amplification factor.
gm0 is not used in BJT amplifier circuits; it is used in JFET circuits. It is the transconductance at zero gate bias. Since the transconductance varies as the bias is varied, this gives a benchmark level at a given defined point, and other transconductances can be calculated from it as a function of the amount of negative bias on the gate. If it were linear it would be the same everywhere, but it is not.
Fixed Bias,Self Bias, Forward Bias, Reverse Bias
the bias that we are better, smarter, and kinder than others
With the E-MOSFET, VGS has to be, 'greater than VGS(th) to get any drain current at all. Therefore, when E-MOSFETs are biased, self-bias, current-source bias, and zero bias cannot be used because these forms of bias depend on the depletion mode of operation. This leaves gate bias, voltage-divider bias, and source bias as the means for biasing E-MOSFETs.
When we apply reverse bias voltage to input and output sides of a BJT, then the width of the depletion layer at emitter-base and base-collection got increased. Due to which the effective base width got decreased. This phenomenon of reduction in the base width is called Early effect. And if we go on increasing the Reverse bias voltage then at a time instant the width of the base becomes zero and this effect is called punch through effect and that reverse bias voltage is called punch through voltage.
The picture quality is not that great but here is a drawing of a self biased common collector BJT http://imageshack.us/photo/my-images/200/selfbiasedcommoncollect.png/
common emitter using fixed bias
gm0 is not used in BJT amplifier circuits; it is used in JFET circuits. It is the transconductance at zero gate bias. Since the transconductance varies as the bias is varied, this gives a benchmark level at a given defined point, and other transconductances can be calculated from it as a function of the amount of negative bias on the gate. If it were linear it would be the same everywhere, but it is not.
a capacitor that bypasses a BJT's emitter bias resistor so the emitter is at AC ground but has a DC bias voltage on it to set operating conditions. without the bypass, the bias would not stay constant.
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
What? Bias is a one sided opinion
of course stability of self bias circuit is much greater than fixed bias circuit
Fixed Bias,Self Bias, Forward Bias, Reverse Bias
tel me the devices like diode,mosfet,bjt....etc.
The turn-on time in a bipolar junction transistor (BJT) refers to the duration it takes for the transistor to switch from the cutoff region (off state) to the saturation region (on state) after a forward bias is applied. Conversely, the turn-off time is the time required for the BJT to switch from saturation back to cutoff after the bias is removed. These times are influenced by factors such as the transistor's internal capacitances, the base drive current, and the collector-emitter voltage. Minimizing these times is crucial for improving the switching speed in high-frequency applications.
The emitter bias circuit is called self-bias because the bias voltage across the emitter-resistor is based on the transistor's own characteristics. The bias voltage adjusts itself based on the varying collector current to stabilize the operating point of the transistor. It is a self-adjusting mechanism that helps maintain a stable bias point for the transistor.
the bias that we are better, smarter, and kinder than others