It is the CE (collector - emitter) voltage at a given collector current when the transistor is fully on. Increasing the base current will not lower the CE voltage any more once saturation has been reached.
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
The turn-on time in a bipolar junction transistor (BJT) refers to the duration it takes for the transistor to switch from the cutoff region (off state) to the saturation region (on state) after a forward bias is applied. Conversely, the turn-off time is the time required for the BJT to switch from saturation back to cutoff after the bias is removed. These times are influenced by factors such as the transistor's internal capacitances, the base drive current, and the collector-emitter voltage. Minimizing these times is crucial for improving the switching speed in high-frequency applications.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
it is the collector voltage multiplied by the sum of all the currents.
The base-emitter voltage of a BJT is dependent on temperature and current. The minimum voltage ranges from 0.6V to 0.7V. Anything less, and the transistor goes into cutoff. As far as "proper voltage" is concerned, it is more correct to say "proper current", because that is the basis for the BJT - it is a current amplifier, not a voltage amplifier. The proper current depends on the particular biasing design of the circuit at hand.
Cut-off and saturation
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
the common collector can use as voltage buffer
Collector-emitter saturation voltage refers to the voltage drop across the collector-emitter junction of a transistor when the transistor is in saturation mode. It is the minimum voltage required to keep the transistor in saturation, where the transistor is fully turned on and conducting maximum current.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
The Self Bias of the BJT is also called the voltage divider bias. It is called thus because it can stabilize the collector current, the base emitter voltage and the amplification factor.
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
it is the collector voltage multiplied by the sum of all the currents.
BJT is a example for current controll device. And JFET is a voltage controlled device.
An advantage of JFET is stable high current operation. A disadvantage of JFET is low capacitance. An advantage of BJT is constant voltage operation. A disadvantage of BJT is low thermal conductance.
For MOS fabrication, wafers with crystal orientation <100> are used. This helps achieve a lower threshold voltage and for BJT <111> orientation is preferred.
The base-emitter voltage of a BJT is dependent on temperature and current. The minimum voltage ranges from 0.6V to 0.7V. Anything less, and the transistor goes into cutoff. As far as "proper voltage" is concerned, it is more correct to say "proper current", because that is the basis for the BJT - it is a current amplifier, not a voltage amplifier. The proper current depends on the particular biasing design of the circuit at hand.