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When the forward saturation in Bipolar junction transistor occurs?
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
Turn on and off time in bjt?
The turn-on time in a bipolar junction transistor (BJT) refers to the duration it takes for the transistor to switch from the cutoff region (off state) to the saturation region (on state) after a forward bias is applied. Conversely, the turn-off time is the time required for the BJT to switch from saturation back to cutoff after the bias is removed. These times are influenced by factors such as the transistor's internal capacitances, the base drive current, and the collector-emitter voltage. Minimizing these times is crucial for improving the switching speed in high-frequency applications.
What is bjt and jfet?
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
What is the formula for bjt power consumption?
it is the collector voltage multiplied by the sum of all the currents.
Minimum proper base emitter voltage at any instant?
The base-emitter voltage of a BJT is dependent on temperature and current. The minimum voltage ranges from 0.6V to 0.7V. Anything less, and the transistor goes into cutoff. As far as "proper voltage" is concerned, it is more correct to say "proper current", because that is the basis for the BJT - it is a current amplifier, not a voltage amplifier. The proper current depends on the particular biasing design of the circuit at hand.
When a bjt is used as a switch its stable operating points are?
Cut-off and saturation
When the forward saturation in Bipolar junction transistor occurs?
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
Turn on and off time in bjt?
The turn-on time in a bipolar junction transistor (BJT) refers to the duration it takes for the transistor to switch from the cutoff region (off state) to the saturation region (on state) after a forward bias is applied. Conversely, the turn-off time is the time required for the BJT to switch from saturation back to cutoff after the bias is removed. These times are influenced by factors such as the transistor's internal capacitances, the base drive current, and the collector-emitter voltage. Minimizing these times is crucial for improving the switching speed in high-frequency applications.
Which bjt transistor amplifier can be used as a voltage buffer?
the common collector can use as voltage buffer
What is Collector Emitter saturation voltage?
Collector-emitter saturation voltage refers to the voltage drop across the collector-emitter junction of a transistor when the transistor is in saturation mode. It is the minimum voltage required to keep the transistor in saturation, where the transistor is fully turned on and conducting maximum current.
Why it is named as self Bias of BJT?
The Self Bias of the BJT is also called the voltage divider bias. It is called thus because it can stabilize the collector current, the base emitter voltage and the amplification factor.
What is bjt and jfet?
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
How biasing of FET differs from biasing of BJT?
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
What is the formula for bjt power consumption?
it is the collector voltage multiplied by the sum of all the currents.
What are current controllable devices?
BJT is a example for current controll device. And JFET is a voltage controlled device.
What are the advantages and disadvantages of JFET over BJT?
An advantage of JFET is stable high current operation. A disadvantage of JFET is low capacitance. An advantage of BJT is constant voltage operation. A disadvantage of BJT is low thermal conductance.
Which crystal structure is preferred to fabricate BJT in VLSI technology?
For MOS fabrication, wafers with crystal orientation <100> are used. This helps achieve a lower threshold voltage and for BJT <111> orientation is preferred.
