I am assuming the charge carries are electron and hole in an semiconductor. the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor. the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen. in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.
ON Semiconductor was created in 1999.
combination of two semiconductor
Vitesse Semiconductor was created in 1984.
Nothing has been found about the electrical conductivity of carbon compared to other conductors. It is not a semiconductor.
The mobility of electrons is always greater than holes. Only the number of electrons and holes would be same in an intrinsic semiconductor.
Mobility means how quickly an electron can move through a metal or semiconductor when an electric field is applied.
I am assuming the charge carries are electron and hole in an semiconductor. the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor. the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen. in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.
Sheng S. Li has written: 'Semiconductor physical electronics' -- subject(s): Semiconductors, Solid state physics 'The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon' -- subject(s): Electric properties, Electric resistance, Electron mobility, Semiconductor doping, Silicon
It is a semiconductor.
Arsenic is not a semiconductor by itself, but it is commonly used as a dopant in semiconductor materials like silicon to alter their electrical properties. Arsenic increases the number of available charge carriers in the material, which can make it conduct electricity more effectively.
A semiconductor slice is used to make integrated circuits or ICs. It is also known as a semiconductor wafer or a semiconductor substrate.
ON Semiconductor was created in 1999.
Tungsten is really a semiconductor.
The population of ON Semiconductor is 21,000.
NaCl is not a semiconductor.
intergenerational mobility...structural mobility...intragenerational mobility...exchange mobility