at 300 Kelvin, silicon band gap is 1.11 eV, Germaium band gap is 0.66 eV.
source: hyperphysics.phy-astr.gsu.edu/hbase/Tables/Semgap.html
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
Direct band semconductors are mostly for LEDs. Indirect band semiconductors like Si and Ge are conventional diodes.
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
ionisation energy order for gr 14 is c>si>ge>sn<pb
Ge
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)
Ge (Germanium) and Si (Silicon) are both from group 14 in the periodic table. They are in the same group but not in the same period. Ge is in period 4, while Si is in period 3.