Direct band semconductors are mostly for LEDs. Indirect band semiconductors like Si and Ge are conventional diodes.
Silicon is an indirect band gap semiconductor
Silicon is by all means an indirect band gap material.
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
In semiconductors free electrons are in conduction bands.
The quantum mechanical energy band where electrons reside in semiconductors that participate in interatomic bonding.
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
It is direct band gap material.
In a direct band gap the electron only needs energy to jump to the conduction band. In an indirect band an electron needs energy and momentum to jump to the conduction band
Silicon is an indirect band gap semiconductor
Silicon is by all means an indirect band gap material.
Silicon and Germanium are not used to make LEDs.They are opaque to visible lightThey have the wrong type of band gap (direct instead of indirect).LEDs are made with binary semiconductors, like:Indium Gallium NitrideSilicon CarbideIndium PhosphideGallium Indium Arsenide NitrideIndium Gallium Aluminum Phosphideetc.
Optical sources like LEDs use direct band gap so that conduction band electorn can recombine directly with a hole in valence band .
The band gap represents the minimum energy difference between the top of the valence band and the bottom of the conduction band, However, the top of the valence band and the bottom of the conduction band are not generally at the same value of the electron momentum. In a direct band gap semiconductor, the top of the valence band and the bottom of the conduction band occur at the same value of momentum.In an indirect band gap semiconductor, the maximum energy of the valence band occurs at a different value of momentum to the minimum in the conduction band energy
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
direct band gap means in e-k diagram valance bands are exactly below covalance band,in this band electron falls from the conduction band to valance band directly without going to metastable state and in indirect band gap the band electron falls from the conduction band to valance band by first going through the metastable state
In semiconductors free electrons are in conduction bands.