Silicon is by all means an indirect band gap material.
Direct band gap means in E-K diagram valance bands are exactly below covalance band,in this band electon fall's c.b to v.b direct without going to metastable state
Silicon is an indirect band gap semiconductor
As that of most power devices power diode are maid from silicon material(because of its wide band gap) . but now days alloy of silicon are used like sic(silicon carbide) by ank
Direct band semconductors are mostly for LEDs. Indirect band semiconductors like Si and Ge are conventional diodes.
C is a conductor, so valence and conduction bands overlap. if you mean SiC, silicon carbide, energy gap is ~2.86eV @ 300K (ambient temperature)
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
It is direct band gap material.
Silicon is an indirect band gap semiconductor
Yes it is.
bcz silicon has direct band gap.in intermediatestage its not required any external energy between conduction band and valence band..due to that radiation willbe less..more external energy more more energy radiate...
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
carbon is not used as the semiconductor because it has larger band gap than silicon and germenium
silicon
I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.
Optical sources like LEDs use direct band gap so that conduction band electorn can recombine directly with a hole in valence band .
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
I agree with Binitha on the point that Silicon is an indirect band gap semiconductor.