Silicon is considered an indirect band gap material because the maximum of its valence band and the minimum of its conduction band occur at different momentum values (k-values) in its crystal structure. This means that a direct transition of electrons from the valence band to the conduction band requires a change in momentum, which is not possible without the assistance of a phonon (a quantized mode of vibration). As a result, silicon is less efficient at absorbing and emitting light compared to direct band gap materials, which have their band extrema aligned in momentum space. This property is crucial for its applications in electronic devices rather than optoelectronic applications.
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
I agree with Binitha on the point that Silicon is an indirect band gap semiconductor.
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
The energy gap, or bandgap, of silicon refers to the energy difference between the valence band and the conduction band, which is approximately 1.1 eV at room temperature. In contrast, the turn-on voltage is the minimum voltage required to forward-bias a silicon diode, allowing significant current to flow; this typically ranges from 0.6 to 0.7 volts. While the energy gap is a fundamental property of the material related to its electronic structure, the turn-on voltage is influenced by factors such as temperature and doping levels.
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
Silicon is by all means an indirect band gap material.
Silicon is an indirect band gap semiconductor
It is direct band gap material.
I agree with Binitha on the point that Silicon is an indirect band gap semiconductor.
Some examples of indirect bandgap materials include silicon, germanium, and gallium arsenide. These materials have a bandgap structure in which electrons have different momentum in the conduction band compared to the valence band, making optical transitions less likely.
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
bcz silicon has direct band gap.in intermediatestage its not required any external energy between conduction band and valence band..due to that radiation willbe less..more external energy more more energy radiate...
I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.
Optical sources like LEDs use direct band gap so that conduction band electorn can recombine directly with a hole in valence band .
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
In a direct band gap the electron only needs energy to jump to the conduction band. In an indirect band an electron needs energy and momentum to jump to the conduction band