Yes it is.
Gallium Arsenide (GaAs) has a 2.5eV band gap (@ 295 K)
It is direct band gap material.
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
Silicon is by all means an indirect band gap material.
I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.
Optical sources like LEDs use direct band gap so that conduction band electorn can recombine directly with a hole in valence band .
In a direct band gap the electron only needs energy to jump to the conduction band. In an indirect band an electron needs energy and momentum to jump to the conduction band
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
Direct band semconductors are mostly for LEDs. Indirect band semiconductors like Si and Ge are conventional diodes.
The band gap represents the minimum energy difference between the top of the valence band and the bottom of the conduction band, However, the top of the valence band and the bottom of the conduction band are not generally at the same value of the electron momentum. In a direct band gap semiconductor, the top of the valence band and the bottom of the conduction band occur at the same value of momentum.In an indirect band gap semiconductor, the maximum energy of the valence band occurs at a different value of momentum to the minimum in the conduction band energy
bcz silicon has direct band gap.in intermediatestage its not required any external energy between conduction band and valence band..due to that radiation willbe less..more external energy more more energy radiate...
The band gap of zinc selenide is approximately 2.7 electron volts (eV). This value indicates the energy difference between the valence band and the conduction band in the material. Zinc selenide is a semiconductor commonly used in optoelectronic applications due to its wide band gap.