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Marielle Crist
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Why silicon has more barrier potential than germanium?
Silicon has a larger band gap than germanium, leading to a higher barrier potential. This is due to the differences in the electronic structure of these two materials. Silicon's larger band gap means that it requires more energy to move electrons across the junction, resulting in a higher barrier potential compared to germanium.
Why the breakdown voltage of silicon is 0.7V whereas for germanium it is 0.3V?
The difference in breakdown voltage between silicon (0.7V) and germanium (0.3V) is mainly due to their different band gap energies. Silicon has a larger band gap compared to germanium, resulting in a higher breakdown voltage. This means that silicon can withstand a higher voltage before breaking down compared to germanium.
Why deplition region is small in germanium?
The depletion region in germanium is small because germanium has a lower band gap compared to silicon. This results in a higher charge carrier concentration and a narrower depletion region. Additionally, germanium has a higher intrinsic carrier concentration, leading to a smaller depletion region.
What are the indirect bandgap materials?
Some examples of indirect bandgap materials include silicon, germanium, and gallium arsenide. These materials have a bandgap structure in which electrons have different momentum in the conduction band compared to the valence band, making optical transitions less likely.
Why is germanium more metallic than silicon?
Germanium has a smaller band gap compared to silicon, allowing it to conduct electricity more effectively. Its crystal structure also has a closer packing arrangement of atoms compared to silicon, making it more metallic in nature. Overall, these factors contribute to germanium exhibiting more metallic properties than silicon.
What is the energy band gap of germanium?
The energy band gap of germanium is approximately 0.67 electronvolts (eV). This means that it requires this amount of energy to move an electron from the valence band to the conduction band in germanium.
What is the energy band gap for germanium?
The energy band gap for germanium is around 0.67 electron volts (eV) at room temperature. This makes germanium a semiconductor with properties in between those of conductors and insulators.
Why silicon has more barrier potential than germanium?
Silicon has a larger band gap than germanium, leading to a higher barrier potential. This is due to the differences in the electronic structure of these two materials. Silicon's larger band gap means that it requires more energy to move electrons across the junction, resulting in a higher barrier potential compared to germanium.
Why the breakdown voltage of silicon is 0.7V whereas for germanium it is 0.3V?
The difference in breakdown voltage between silicon (0.7V) and germanium (0.3V) is mainly due to their different band gap energies. Silicon has a larger band gap compared to germanium, resulting in a higher breakdown voltage. This means that silicon can withstand a higher voltage before breaking down compared to germanium.
The gallium arsenide is prepared for laser action but silicon and germanium are not. explain why?
I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.
What is the energy band of germanium?
Germanium has an indirect band gap of approximately 0.7 electronvolts at room temperature. It is a semiconductor material with a crystalline structure that allows for the manipulation of its electronic properties in various electronic devices.
Why cut in voltage of silicon is more than that of germanium?
Silicon has a larger band gap energy than germanium, resulting in a higher cut-in voltage for silicon diodes compared to germanium diodes. The larger band gap in silicon means that it requires more energy for electrons to be excited into the conduction band, resulting in a higher cut-in voltage.
Why the temperature sensitivity of silicon is less than germanium?
The temperature sensitivity of silicon is less than germanium because silicon has a wider energy band gap than germanium. This wider band gap allows silicon to operate more efficiently at higher temperatures, resulting in less temperature-dependent changes in its electrical properties compared to germanium. Additionally, silicon has a higher thermal conductivity than germanium, which helps dissipate heat more effectively, reducing temperature effects on its performance.
Why do we mostly use indirect semiconductors?
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
Why deplition region is small in germanium?
The depletion region in germanium is small because germanium has a lower band gap compared to silicon. This results in a higher charge carrier concentration and a narrower depletion region. Additionally, germanium has a higher intrinsic carrier concentration, leading to a smaller depletion region.
What are the indirect bandgap materials?
Some examples of indirect bandgap materials include silicon, germanium, and gallium arsenide. These materials have a bandgap structure in which electrons have different momentum in the conduction band compared to the valence band, making optical transitions less likely.
Why the knee voltage for germanium is 0.2v?
The knee voltage for germanium is around 0.2V because this is the point at which the diode starts conducting current in a forward bias condition. Below this voltage, the diode remains non-conductive. This specific value is determined by the band gap energy of germanium.
