The temperature sensitivity of silicon is less than germanium because silicon has a wider energy band gap than germanium. This wider band gap allows silicon to operate more efficiently at higher temperatures, resulting in less temperature-dependent changes in its electrical properties compared to germanium. Additionally, silicon has a higher thermal conductivity than germanium, which helps dissipate heat more effectively, reducing temperature effects on its performance.
No, silicon and germanium are not always used in alloys. Silicon is commonly used in alloys, such as in aluminum-silicon alloys. Germanium is less commonly used in alloys due to its high cost and limited availability compared to other alloying elements.
Silicon is more stable than germanium primarily due to its larger bandgap and stronger covalent bonding characteristics. The tetrahedral bonding structure of silicon allows for a more robust lattice arrangement, making it less susceptible to defects and thermal instability. Additionally, silicon's higher electronegativity contributes to its stability, as it forms stronger bonds with other elements. Consequently, silicon exhibits greater thermal and chemical resistance compared to germanium.
The mantle has less aluminum and less silicon than the crust does.
an isotope of germanium. There are 5 stable isotopes of germanium (70, 72, 73, 74, and 76), so with two less neutrons than these you could have these isotopes (68, 70, 71, 72, or 74) of which the isotopes 68 and 71 are radioactive.
Silicon is the most common element used in semiconductors due to its abundance and well-understood properties. Germanium is another element used in semiconductors, although less commonly than silicon. Arsenic and phosphorus are often incorporated as dopants to introduce either additional electrons (n-type doping) or electron vacancies (p-type doping) in semiconductors.
Carbon, silicon, germanium are all teravalent atoms (4 electrons in the outer shell). Each element becomes heavier, and (because there are more total electrons) is less "pure" in it's chemical (and electrical) responses.
Germanium has higher electron and hole mobilities compared to silicon, making it more sensitive to small magnetic fields in Hall effect experiments. Additionally, germanium has a lower bandgap energy, which allows for the Hall voltage to be easily measured at room temperature. Silicon, on the other hand, has a higher bandgap energy leading to less sensitivity in detecting small magnetic fields.
Germanium has limited use in modern electronics primarily due to its higher thermal sensitivity and lower electron mobility compared to silicon. While it was once used in transistors and diodes, its performance in high-temperature environments and power applications is inferior to silicon. Additionally, the cost and availability of germanium make it less attractive for widespread use in today's semiconductor industry, which favors silicon-based technologies.
silicon is less sensitive towards temperature.It costs low compared to germanium,
Silicon is actually preferred to germanium within the manufacture of semiconductor devices due to the following reasons:Silicon is cheap and abundantIn silicon, leakage current is less affected by temperature as compared to germanium.The leakage current in silicon is very very small as compared to germanium.The working temperature of silicon is more than that of germanium. The working junction temperature of silicon can go as high as 150C whereas the working junction temperature of germanium can only go as high as 60CSilicon dioxide is a stable insoluble solid that can be used both to electrically insulate circuitry and to passivate junctions preventing contamination (allowing use of inexpensive plastic packages), germanium dioxide is a crumbly water soluble solid (this requires all germanium devices to be packaged in expensive metal or glass hermetically sealed cases and making germanium integrated circuits almost impossible)
products made by silicon are more stable than those made by germanium
germanium has great intrinsic concentration at room temperature,hence conduction is great in germanum compared to silicon, and resistance decreases in germanum and hence built in potentail also less in germanum compared to silicon.built in potential of silicon is 0.7v built in potential of germanum is 0.3v. 1)intrinsic concentration of germanium at room temperature is 2.5*10^13 atoms/cm^3. 2)intrinsic concentration of silicon at room temperature of 300k is 1.5*10^10 atoms/cm^3.
Silicon transistors are preferred to germanium transistors because they exhibit higher thermal stability and are less prone to temperature variations. Silicon transistors also have a higher maximum operating temperature, improved frequency response, and are more reliable in terms of long-term performance. Additionally, silicon is more abundant and easier to work with in manufacturing processes compared to germanium.
because lekage current of silicon is less than germenium
Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.
Silicon has a higher operating temperature and greater thermal stability compared to germanium. Silicon has a larger bandgap energy which makes it better suited for high-power applications. Germanium has a higher electron mobility which can result in faster transistors, but it is less commonly used in modern semiconductor devices.
Silicon diodes have a higher forward voltage drop (~0.7V) compared to germanium diodes (~0.3V). Silicon diodes have higher temperature stability and are more commonly used in modern electronic devices, while germanium diodes are more sensitive to temperature changes and are less commonly used.