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Silicon's surface has a high affinity for oxygen and thus an oxide layer rapidly forms upon exposure to the atmosphere. The chemical reactions which describe this formation are:

(1)

(2)

In the first reaction a dry process is utilized involving oxygen gas as the oxygen source and the second reaction describes a wet process which uses steam. The dry process provides a "good" silicon dioxide but is slow and mostly used at the beginning of processing. The wet procedure is problematic in that the purity of the water used cannot be guaranteed to a suitable degree. This problem can be easily solved using a pyrogenic technique which combines hydrogen and oxygen gases to form water vapor of very high purity. Maintaining reagents of high quality is essential to the manufacturing of integrated circuits, and is a concern which plagues each step of this process.

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Q: What is the difference between wet oxidation and dry oxidation?
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Dry oxidation has a lower growth rate than wet oxidation although the oxide film quality is better than the wet oxide film. Therefore thin oxides such as screen oxide, pad oxide, and especially gate oxide normally use the dry oxidation process. Dry oxidation also results in a higher density oxide than that achieved by wet oxide and so it has a higher breakdown voltageIn case of wet oxidation where water is use instead of oxygen, the water molecule can dissociate at high temperatures to form hydroxide OH that can diffuse in the silicon faster than molecular O2. Therefore the wet oxidation process has a significantly higher oxidation rate than the dry oxidation. It is used to grow thick oxides such as masking oxide, blanket field oxide, and the LOCOS oxide.


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