The holes and electrons move away from the junction and attracted towards the terminals as the positive polarity is connected to the n-side and negative polarity to p-side.
forward bias is in the direction a junction or vacuum tube wants to conduct currentreverse bias is in the direction a junction or vacuum tube opposes conducting current
the junction is conducting when forward biased, approaching zero resistancethe junction is nonconducting when reverse biased, approaching infinite resistanceneither is exactly zero or infinite
a transistor can only work in active region cox in active region collector base junction is in reverse bias and emitter base junction is in forward bias.
in forward biasing depletion region width decreases and in reverse biasing it increases .
Reverse voltage is voltage is applied in reverse. Instead of the positive voltage going into the anode lead of a component, it goes into the cathode lead of the component.
When we apply reverse bias voltage to input and output sides of a BJT, then the width of the depletion layer at emitter-base and base-collection got increased. Due to which the effective base width got decreased. This phenomenon of reduction in the base width is called Early effect. And if we go on increasing the Reverse bias voltage then at a time instant the width of the base becomes zero and this effect is called punch through effect and that reverse bias voltage is called punch through voltage.
forward bias is in the direction a junction or vacuum tube wants to conduct currentreverse bias is in the direction a junction or vacuum tube opposes conducting current
reverse bias it
because the current push to the junction.
the junction is conducting when forward biased, approaching zero resistancethe junction is nonconducting when reverse biased, approaching infinite resistanceneither is exactly zero or infinite
a transistor can only work in active region cox in active region collector base junction is in reverse bias and emitter base junction is in forward bias.
any capacitance is given by equation C = (epsilon * A/ d) where d is distance between two plates, thus as d reduces C increases. Now, in depletion region as we increase reverse bias, the depletion region width increases. Now consider depletion region as a parallel plate capacitor, with positive charges on n side and negative charges on p side. Thus, as reverse bias increases, d of junction capacitance increases thus capacitance reduces. On other hand, as reverse bias reduces, d of junction capacitance reduces, thus capacitance increases. -Amey Churi
If no forward or reverse bias is applied from outside then the diode or transistor(I'm not sure for which did you ask) is in internal equilibrium. thus there's a field created in each junction which prevents the flow of charges across it..
in forward biasing depletion region width decreases and in reverse biasing it increases .
Assuming you mean a bipolar junction transistor (BJT): 1. Reverse bias on the collector-base junction. 2. Forward bias on the base-emitter junction, that is 3. Sufficient to give the correct operating point of collector voltage/collector current.
For a fixed value of Vbe,as Vce increases the reverse bias on the collector base junction increases,hence the width of the depletion layer increases.therefore base width decreases,so collector current increases. To minimise this effect base must be heavily doped than collector CONSEQUENCES: ->due to early effect collector current increases with increasing Vce,for a fixed value of Vbe. ->the base current do not change significantly Early effect=collector current * correction factor
Reverse voltage is voltage is applied in reverse. Instead of the positive voltage going into the anode lead of a component, it goes into the cathode lead of the component.