Electron-hole recombination
there is difference between doping levels.In normal PN junction diode we add 1 impurity for 108 atoms where as in tunnel diode we add 1 impurity for 103 atoms.there is a probability that electrons may penetrate through barrier.So will not disappear in tunnel diode we get maximum current before barrier disappear where as we get maximum current after break down(there is no barrier) this effect lies within a certain voltage limit of 0.4V. When we consider the energy band structure in case of PN junction diode the fermi level lies inside the forbidden energy gap.In case of tunnel diode,the fermi level lies outside the forbidden energy band. In tunnel diode, there is a topic about negative resistance region where as we cannot discuss it in PN junction diode. ur friend, uma.
The process of conversion of AC into DC is known as rectification device used for this purpose is called as rectifier.A PN diode conducts well when it is forward biased and does not conduct Negligible current when it is reverse biased.This unidirectional nature of diode is used for the purpose of rectification.
gunn diode is transfered electron device & PIN diode is semiconductor device
whether we know that p-n diode is real diode. But still in case of semeconductor we see then silics is real diode.
Bulk resistance of diode depends on how it is biased. The bulk resistance of a diode is the approximate resistance of the diode when it is forward biased.
A: By applying to a laser diode pulse of current enough energy to emit photons at a certain frequency.
A silicon avalanche photo diode is fabricated by the process called impact ionization.
There are diodes and there are diodes LED are made from arsenic doping to emit photons are never used for other purposes other then LED
Usually made from arsenic or other rare earths. they emit photons at specific voltage and or current the range changes with color, wattage and manufacture specification The emission of photons and the angle including all the spectrum color vary from device to device.
A light emitting diode is a special type of diode made of transparent semiconductor (silicon & germanium are opaque) like aluminum indium gallium phosphide. The selected semiconductor must also have a large enough band gap that when electrons fall into holes photons are emitted.
By Varying the impurity concentration
A light-emitting diode (LED) emits light when an electric current passes through it. A photodiode, on the other hand, generates an electric current when exposed to light. In summary, an LED produces light, while a photodiode detects light.
They are made by rare earth like gallium arsenide so when excited by a voltage and current photons are emitted. The angle frequency and emission are different for each device type
there is difference between doping levels.In normal PN junction diode we add 1 impurity for 108 atoms where as in tunnel diode we add 1 impurity for 103 atoms.there is a probability that electrons may penetrate through barrier.So will not disappear in tunnel diode we get maximum current before barrier disappear where as we get maximum current after break down(there is no barrier) this effect lies within a certain voltage limit of 0.4V. When we consider the energy band structure in case of PN junction diode the fermi level lies inside the forbidden energy gap.In case of tunnel diode,the fermi level lies outside the forbidden energy band. In tunnel diode, there is a topic about negative resistance region where as we cannot discuss it in PN junction diode. ur friend, uma.
zener diode :zener diode operates under reverse bias voltageideal diode :ideal diode operates under forward bias voltage
The energy band gap between the cathode and anode is too small to generate photons of higher energy than far IR.Silicon is opaque to visible light (and even IR).
yes, diode can be used as rectifier diode to convert ac to dc